BAV199价格

参考价格:¥0.2860

型号:BAV199 品牌:INFINEON 备注:这里有BAV199多少钱,2024年最近7天走势,今日出价,今日竞价,BAV199批发/采购报价,BAV199行情走势销售排行榜,BAV199报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BAV199

Low-leakagedoublediode

DESCRIPTION Epitaxial,medium-speedswitching,doublediodeinasmallSOT23plasticSMDpackage.Thediodesareconnectedinseries. FEATURES •PlasticSMDpackage •Lowleakagecurrent:typ.3pA •Switchingtime:typ.0.8µs •Continuousreversevoltage: max.75V •

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BAV199

SiliconLowLeakageDiodeArray(Low-leakageapplicationsMediumspeedswitchingtimesConnectedinseries)

●Low-leakageapplications ●Mediumspeedswitchingtimes ●Connectedinseries

SIEMENS

Siemens Ltd

SIEMENS
BAV199

DUALSURFACEMOUNTLOWLEAKAGEDIODE

Features •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •VeryLowLeakageCurrent •Lead,HalogenandAntimonyFree,RoHSCompliantGreenDevice(Notes3and4)

DIODESDiodes Incorporated

达尔科技

DIODES
BAV199

IntroducingVeryLowLeakageSOT-23Diodes:

Features •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •VeryLowLeakageCurrent •LeadHalogenandAntimonyFree,RoHSCompliantGreenDevice(Notes1and2) •QualifiedtoAEC-Q101StandardsforHighReliability

DIODESDiodes Incorporated

达尔科技

DIODES
BAV199

SiliconLowLeakageDiode

SiliconLowLeakageDiode •Low-leakageapplications •Mediumspeedswitchingtimes •Seriespairconfiguration •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BAV199

SurfaceMountSwitchingDiode

SWITCHINGDIODE160mAMPERES75VOLTS Features: *FastSwitchingSpeed *SurfaceMountPackageIdeallySuitedforAutomaticInsertion *VeryLowLeakageCurrent

WEITRONWEITRON

威堂電子科技

WEITRON
BAV199

Dualsurfacemountlowleakagediode

FEATURES •Mediumspeedcurrentapplications. •Verylowleakagecurrent. •Surfacemountpackageideallysuitedforautomaticinsertion APPLICATIONS •Smallsignalswitching

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
BAV199

SURFACEMOUNT,LOWLEAKAGESWITCHINGDIODES

VOLTAGE100VoltPOWER250mWatt FEATURES •Sufacemountpackageideallysuitedforautomaticinsertion. •Verylowleakagecurrent.2pAtypicalatVR=75V. •Lowcapacitance.2pFmaxatVR=0V,f=1MHz •LeadfreeincompliancewithEURoHS2011/65/EUdirective MECHANICALDATA •Case:SOT-23p

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
BAV199

DUALSURFACEMOUNTLOWLEAKAGEDIODE

Features •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •VeryLowLeakageCurrent •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4)

DIODESDiodes Incorporated

达尔科技

DIODES
BAV199

Low-leakagedoublediode

DESCRIPTION Epitaxial,medium-speedswitching,doublediodeinasmallSOT23plasticSMDpackage.Thediodesareconnectedinseries. FEATURES •PlasticSMDpackage •Lowleakagecurrent:typ.3pA •Switchingtime:typ.0.8µs •Continuousreversevoltage:max.75V •Repet

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BAV199

Low-leakagedoublediode

Features •PlasticSMDpackage •Lowleakagecurrent:typ.3pA •Switchingtime:typ.0.8s •Continuousreversevoltage:max.75V •Repetitivepeakreversevoltage:max.85V •Repetitivepeakforwardcurrent:max.500mA.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
BAV199

DualSeriesSwitchingDiode

Features •LowCurrentLeakage •ForwardCurrent:IF=215mA. •SmallOutlineSurfaceMountPackage •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Marking:JY •LeadFreeFinish/RohsCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Hal

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
BAV199

Plastic-EncapsulateDiode

Features ForwardCurrent IF:215mA ReverseVoltage VR:70V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55to+150oC

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
BAV199

LOWLEAKAGEDOUBLEDIODE

LOWLEAKAGEDOUBLEDIODE Forlowleakagecurrentapplications Feature •Verylowleakagecurrent •Mediumspeedswitchingtimes •Seriespairconfiguration

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC
BAV199

DUALSURFACEMOUNTLOWLEAKAGEDIODE

DESCRIPTION TheUTCBAV199isadualsurfacemountdiodeprovidingthedesignerswithextremelylowleakagecurrent.TheUTCBAV199issuitableforautomaticinsertion FEATURES *ExtremelyLowLeakageCurrent

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
BAV199

SWITCHINGDIODE

SWITCHINGDIODE FEATURES •ThisSwitchingDiodehasTheFollowingFeatures: •LowLeakageCurrentApplications

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
BAV199

Dualsurfacemountlowleakagediode

FEATURES •Mediumspeedcurrentapplications. •Verylowleakagecurrent. •Surfacemountpackageideallysuitedforautomaticinsertion APPLICATIONS •Smallsignalswitching

DSK

Diode Semiconductor Korea

DSK
BAV199

DualSeriseSwitchingDiode

Thisswitchingdiodehasthefollowingfeatures: •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •Availablein8mmTapeandReel

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
BAV199

DualSurfaceMountLowLeakageDiode

Features ◇Mediumspeedcurrentapplications. ◇Verylowleakagecurrent. ◇Surfacemountpackageideallysuitedforautomaticinsertion Applications ◇Smallsignalswitching

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
BAV199

Small-SignalFastSwitchingDiodes

Features VR100V Ifavsinglediodeloaded215mA doublediodeloaded125mA

RFERFE international

RFE国际公司RFE国际股份有限公司

RFE
BAV199

Plastic-EncapsulateSwitchingDiode

Features FastSwitchingDevice(TRR

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI
BAV199

SurfaceMountSwitchingDiodeArray

文件:1.94958 Mbytes Page:15 Pages

FUTUREWAFER

FutureWafer Tech Co.,Ltd

FUTUREWAFER
BAV199

SMDSmallSignalDiodes

文件:194.62 Kbytes Page:2 Pages

DiotecDIOTEC

德欧泰克

Diotec
BAV199

Low-leakagedoublediode

文件:141.6 Kbytes Page:7 Pages

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

RECTRON
BAV199

DualSurfaceMountLowLeakageDiode

文件:1.12709 Mbytes Page:2 Pages

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
BAV199

SwitchingDiode

文件:298 Kbytes Page:3 Pages

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE
BAV199

Dualsurfacemountlowleakagediode

文件:148.23 Kbytes Page:3 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
BAV199

ThreeTerminalsSMDLowLeakageSwitchingDiode

文件:194.85 Kbytes Page:4 Pages

TAITRON

TAITRON

TAITRON
BAV199

Dualsurfacemountlowleakagediode

文件:101.79 Kbytes Page:3 Pages

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
BAV199

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR) 描述:DIODE ARRAY GP 85V 140MA SOT23-3 分立半导体产品 二极管 - 整流器 - 阵列

PAMDiodes Incorporated

龙鼎威

PAM
BAV199

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:散装 描述:GEN PURP DIODE 100V 0.125A SOT- 分立半导体产品 二极管 - 整流器 - 阵列

Yangzhou Yangjie Electronic Technology Co.,Ltd

Yangzhou Yangjie Electronic Technology Co.,Ltd

Yangzhou Yangjie Electronic Technology Co.,Ltd
BAV199

SiliconLowLeakageDiode

文件:73.13 Kbytes Page:6 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
BAV199

SURFACEMOUNT,LOWLEAKAGESWITCHINGDIODES

文件:142.06 Kbytes Page:3 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
BAV199

DUALSURFACEMOUNTLOWLEAKAGEDIODE

文件:355.74 Kbytes Page:3 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

DUALSURFACEMOUNTLOWLEAKAGEDIODE

Features •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •VeryLowLeakageCurrent •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4)

DIODESDiodes Incorporated

达尔科技

DIODES

DUALSURFACEMOUNTLOWLEAKAGEDIODE

Features •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •VeryLowLeakageCurrent •Lead,HalogenandAntimonyFree,RoHSCompliantGreenDevice(Notes3and4)

DIODESDiodes Incorporated

达尔科技

DIODES

DUALSURFACEMOUNTLOWLEAKAGEDIODE

Features •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •VeryLowLeakageCurrent •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes3and4)

DIODESDiodes Incorporated

达尔科技

DIODES

SURFACEMOUNT,LOWLEAKAGESWITCHINGDIODES

VOLTAGE100VoltsPOWER250mWatts FEATURES •Sufacemountpackageideallysuitedforautomaticinsertion. •Verylowleakagecurrent.2pAtypicalatVR=75V. •Lowcapacitance.2pFmaxatVR=0V,f=1MHz •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •Leadfreeincomplyw

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

Multi-ChipDIODES

Multi-ChipDIODES FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent IF:200mA Collector-basevoltage VR:85V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

QUADSURFACEMOUNTLOWLEAKAGEDIODE

Features ●SurfaceMountPackageIdeallySuitedforAutomatedInsertion ●VeryLowLeakageCurrent ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.“Green”Device(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES

QUADSURFACEMOUNTLOWLEAKAGEDIODE

Features ●SurfaceMountPackageIdeallySuitedforAutomatedInsertion ●VeryLowLeakageCurrent ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.“Green”Device(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES

Multi-ChipDIODES

Multi-ChipDIODES FEATURES Powerdissipation PCM:0.2W(Tamb=25℃) Collectorcurrent IF:200mA Collector-basevoltage VR:85V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

SiliconLowLeakageDiode

SiliconLowLeakageDiode •Low-leakageapplications •Mediumspeedswitchingtimes •Seriespairconfiguration •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

DUALSURFACEMOUNTLOWLEAKAGEDIODE

DESCRIPTION TheUTCBAV199isadualsurfacemountdiodeprovidingthedesignerswithextremelylowleakagecurrent.TheUTCBAV199issuitableforautomaticinsertion FEATURES *ExtremelyLowLeakageCurrent

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

DualSeriesSwitchingDiode

DualSeriesSwitchingDiode Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DUALSURFACEMOUNTLOWLEAKAGEDIODE

DESCRIPTION TheUTCBAV199isadualsurfacemountdiodeprovidingthedesignerswithextremelylowleakagecurrent.TheUTCBAV199issuitableforautomaticinsertion FEATURES *ExtremelyLowLeakageCurrent

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

Plastic-EncapsulatedDiodes

SWITCHINGDIODE FEATURES PowerdissipationPD:225mW(Tamb=25℃) ForwardCurrentIF:215mA ReverseVoltageVR:70V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL

DualSeriesSwitchingDiode

DualSeriesSwitchingDiode Thisswitchingdiodehasthefollowingfeatures: •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •Availablein8mmTapeandReel UseBAV199LT1toorderthe7inch/3,000unitreel UseBAV199LT3toorderthe13inch/10,000unitreel

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DualSeriesSwitchingDiode

DualSeriesSwitchingDiode Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DualSeriesSwitchingDiode

DualSeriesSwitchingDiode Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DualSeriesSwitchingDiode

DualSeriesSwitchingDiode Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DualSeriesSwitchingDiode

DualSeriesSwitchingDiode Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

DualSeriesSwitchingDiode

DualSeriesSwitchingDiode Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Low-leakagedoublediode

1.Generaldescription Epitaxial,medium-speedswitching,doublediodeinasmallSOT23Surface-MountedDevice (SMD)plasticpackage.Thediodesareconnectedinseries. 2.Featuresandbenefits •PlasticSMDpackage •Lowleakagecurrent:typ.3pA •Switchingtime:typ.0.8us •Continu

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

SURFACEMOUNT,LOWLEAKAGESWITCHINGDIODES

VOLTAGE100VoltsPOWER200mWatts FEATURES •Sufacemountpackageideallysuitedforautomaticinsertion. •Verylowleakagecurrent.2nAtypicalatVR=75V. •Lowcapacitance.2pFmaxatVR=0V,f=1MHz •IncompliancewithEURoHS2002/95/ECdirectives MECHANICALDATA •Case:SOT-363plastic

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

SURFACEMOUNT,LOWLEAKAGESWITCHINGDIODESARRAY

VOLTAGE100VoltsPOWER200mWatts FEATURES •Sufacemountpackageideallysuitedforautomaticinsertion. •Verylowleakagecurrent.2nAtypicalatVR=75V. •Lowcapacitance.2pFmaxatVR=0V,f=1MHz •IncompliancewithEURoHS2002/95/ECdirectives MECHANICALDATA •Case:SOT-363plastic

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

Low-leakagequadruplediode

1.Generaldescription High-speedquadrupleswitchingdiode,encapsulatedinaSOT363(SC-88)verysmallSurface- MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •PlasticSMDpackage •Lowleakagecurrent:typ.3pA •Switchingtime:typ.0.8μs •Continuousreversevoltag

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

SURFACEMOUNTLOWLEAKAGEDIODE

Features ●Ultra-SmallSurfaceMountPackage ●VeryLowLeakageCurrent

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

SURFACEMOUNTLOWLEAKAGEDIODE

Features •SmallSurfaceMountPackage •Ultra-LowReverseLeakageCurrent(5nA@VR=75V) •LowCapacitance •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) MechanicalData •Case:SOD523 •CaseMaterial:MoldedPlastic

DIODESDiodes Incorporated

达尔科技

DIODES

SURFACEMOUNTLOWLEAKAGEDIODE

Features ●Ultra-SmallSurfaceMountPackage ●VeryLowLeakageCurrent ●LeadFree/RoHSCompliant(Note2) ●QualifiedtoAEC-Q101StandardsforHighReliability

DIODESDiodes Incorporated

达尔科技

DIODES

BAV199产品属性

  • 类型

    描述

  • 型号

    BAV199

  • 功能描述

    DIODE SWITCH 250MW 85V SOT23-3

  • RoHS

  • 类别

    分离式半导体产品 >> 二极管,整流器 - 阵列

  • 系列

    -

  • 其它有关文件

    STTH10LCD06C View All Specifications

  • 标准包装

    1,000

  • 系列

    - 电压 - 在 If

  • 时为正向(Vf)(最大)

    2V @ 5A 电流 - 在 Vr

  • 时反向漏电

    1µA @ 600V 电流 -

  • 平均整流(Io)(每个二极管)

    5A 电压

  • -(Vr)(最大)

    600V

  • 反向恢复时间(trr)

    50ns

  • 二极管类型

    标准

  • 速度

    快速恢复 = 200mA(Io)

  • 二极管配置

    1 对共阴极

  • 安装类型

    表面贴装

  • 封装/外壳

    TO-263-3,D²Pak(2 引线+接片),TO-263AB

  • 供应商设备封装

    D2PAK

  • 包装

    带卷(TR)

  • 产品目录页面

    1553(CN2011-ZH PDF)

  • 其它名称

    497-10107-2

更新时间:2024-3-29 17:43:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODESINC
22+
NA
6000
全新原装品牌专营
NXP
23+
NA
10658
专业电子元器件供应链正迈科技特价代理QQ1304306553
DIODES
2305+
原厂封装
12500
15年芯片行业经验/只供原装正品:0755-83267371邹小姐
DIODES
23+
SOT-323
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
NXP/恩智浦
22+
TO236AB
90006
PHILIPS
2023+
SMD
1654
安罗世纪电子只做原装正品货
NXP
17+
SOT23
9888
全新原装现货
NXP/恩智浦
21+
SOT-23
2238
优势代理渠道,原装正品,可全系列订货开增值税票
DIODESINCORPORATED
9999
原装现货支持BOM配单服务
INF
23+
SOT-23
9960
价格优势、原装现货、客户至上。欢迎广大客户来电查询

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