GaAs MMIC DOUBLE-BALANCED MIXER, 6 - 18 GHz

General Description The HMC141 chip is a minature double-balanced mixer which can be used as an upconverter or downconverter. The HMC142 is identical to the HMC141 except that the layout is a mirror image designed to ease integration into image-reject mixer modules. Features Input IP3: +21

Microwave & MM W Radios

General Description The HmC141 chip is a minature double-balanced mixer which can be used as an upconverter or downconverter. The HmC142 is identical to the HmC141 except that the layout is a mirror image designed to ease integration into image-reject mixer modules. Features input iP3: +21

封装/外壳：模具 包装：散装 描述：IC MMIC MIXER DBL-BAL DIE 1=2PCS RF/IF，射频/中频和 RFID 射频混频器

GaAs MMIC DOUBLE-BALANCED MIXER, 6 - 18 GHz

GaAs MMIC DOUBLE-BALANCED MIXER, 6 - 18 GHz

文件：224.86 Kbytes Page：6 Pages

GaAs MMIC SMT DOUBLEBALANCED MIXER, 6 - 15 GHz

General Description The HMC141C8 is a miniature passive doublebalanced mixer in a non-hermetic ceramic surface mount package that can be used as an upconverter or downconverter. The device is a passive diode/balun type mixer with high dynamic range. The mixer can handle larger signal levels than

GaAs MMIC SMT DOUBLEBALANCED MIXER, 6 - 15 GHz

General Description The HMC141C8 is a miniature passive doublebalanced mixer in a non-hermetic ceramic surface mount package that can be used as an upconverter or downconverter. The device is a passive diode/balun type mixer with high dynamic range. The mixer can handle larger signal levels than

GaAs MMIC SMT DOUBLEBALANCED MIXER, 6 - 15 GHz

General Description The HMC141C8 is a miniature passive doublebalanced mixer in a non-hermetic ceramic surface mount package that can be used as an upconverter or downconverter. The device is a passive diode/balun type mixer with high dynamic range. The mixer can handle larger signal levels than

GaAs MMIC SMT DOUBLE BALANCED MIXER, 7 - 14 GHz

General Description The HMC141LH5 is a miniature passive double balanced mixer housed in a hermetic SMT leadless package that can be used as an upconverter or downconverter. The device is a passive diode/balun type mixer with high dynamic range. The mixer can handle larger signal levels than mo

GaAs MMIC SMT DOUBLE BALANCED MIXER, 7 - 14 GHz

General Description\nThe HMC141LH5 is a miniature passive double balanced mixer housed in a hermetic SMT leadless package that can be used as an upconverter or downconverter. The device is a passive diode/balun type mixer with high dynamic range. The mixer can handle larger signal levels than most a Input IP3: +20 dBm\nLO to RF Isolation: 35 dB\nHermetic SMT Package, 25 mm2\nScreening to MIL-PRF-38535 (Class B or S) AvailableTypical Applications\nThe HMC141LH5 is ideal for:\n• Telecom Infrastructure\n• Military Radio, Radar & ECM\n• Space Systems\n• Test Instrumentation;

GaAs MMIC DOUBLE-BALANCED MIXER, 6 - 18 GHz

文件：224.86 Kbytes Page：6 Pages

GaAs MMIC SMT DOUBLE-BALANCED MIXER, 6 - 15 GHz

文件：260.74 Kbytes Page：4 Pages

GaAs MMIC SMT DOUBLEBALANCED MIXER, 6 - 15 GHz

GaAs MMIC SMT DOUBLE-BALANCED MIXER, 6 - 15 GHz

文件：260.74 Kbytes Page：4 Pages

封装/外壳：12-LCQFN 包装：散装 描述：IC MMIC MIXER DBL-BAL CERAMIC RF/IF，射频/中频和 RFID 射频混频器

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

POWER TRANSISTORS(10A,60-100V,125W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP