| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HM80N06K | 丝印代码：HM80N06K；N-Channel Enhancement Mode Power MOSFET 文件：570.21 Kbytes Page：7 Pages | HMSEMI 华之美半导体 |   | |
丝印代码：HM80N06KA；N-Channel Enhancement Mode Power MOSFET 文件：708.19 Kbytes Page：7 Pages | HMSEMI 华之美半导体 | | ||
N沟道中压大电流MOS(100V以下) | HMPOWERSEMI 虹美功率 | | ||
TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP80N06LT is sup | PHILIPS 飞利浦 | | ||
TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP80N06LT is sup | PHILIPS 飞利浦 | | ||
TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP80N06LT is sup | PHILIPS 飞利浦 | | ||
TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a | PHILIPS 飞利浦 | | ||
N-Channel MOSFET 文件：453.42 Kbytes Page：8 Pages | FAIRCHILD 仙童半导体 | |
HM80N06K产品属性
- 类型
描述
- 封装（Package）：
TO-252
- 沟道（Polarity）：
N沟道
- VDS(Max)BVDSS(V)：
60.00V
- ID(Max)ID(A)：
80.00A
- IDM：
180.00A
- VTH(Typ)：
1.30V
- VGS：
20.00V
- RDS(ON)@-10VTyp(mΩ)：
6.50mΩ
- RDS(ON)@-4.5VTyp(mΩ)：
0.00mΩ
- RDS(ON)@-2.5VTyp(mΩ)：
0.00mΩ
- 直接替代型号（compatible）：
CEP80N06/NTP80N06/MTP80N06/RFP80N06/SUP80N06/AOT2606/AOT2608/IRFZ48V/IRF1018E
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MTK |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
|||
HM8086 |
25+ |
10 |
10 |
||||
MTK |
18++ |
SMD |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
华昕 |
22+ |
SOT-89 |
20000 |
公司只做原装 品质保障 |
|||
HMSEMI |
23+ |
TO252 |
62388 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
HM国产 |
26+ |
SOP8 |
30000 |
公司新到进口原装现货假一赔十 |
|||
MHS |
06+ |
原厂原装 |
9916 |
只做全新原装真实现货供应 |
|||
MTK |
2450+ |
SMD |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
华昕 |
24+ |
SOT-89 |
8000 |
新到现货，只做全新原装正品 |
|||
MHS |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售 |
HM80N06K芯片相关品牌
HM80N06K规格书下载地址
HM80N06K参数引脚图相关
- IGBT模块
- id卡
- ic元器件
- ic元件
- ic型号
- ic行业
- ic网
- ic市场
- ic设计
- ic交易
- ic厂家
- ic查询
- IC插座
- ic测试
- ic采购
- IC(集成电路)
- hynix
- hy57v161610
- hs25
- hs20
- HM85-50132LFTR
- HM85-50102LFTR
- HM85-44151LFTR
- HM85-37501LFTR
- HM85-37223LFTR
- HM85-37152LFTR
- HM85-37103LFTR
- HM85-37102LFTR
- HM85-32261LFTR
- HM821K
- HM820K
- HM8205Q
- HM8201A
- HM8201
- HM8134-3
- HM8131-2
- HM8123
- HM8119C
- HM8119B
- HM8119A
- HM8119
- HM8118
- HM8116A
- HM8116
- HM8115-2 EU CAL DU
- HM8115-2 EU CAL D
- HM8115-2 EU CAL
- HM8115-2
- HM8115
- HM8114H
- HM8114
- HM8113B
- HM8113
- HM8112A
- HM8112-3
- HM8112
- HM811
- HM80N80
- HM80N70
- HM809T
- HM809S
- HM809R
- HM809M
- HM809L
- HM809J
- HM8094
- HM8092N
- HM8092
- HM8091N
- HM8091
- HM80-90009
- HM809
- HM80-80005
- HM80-70004
- HM8067C
- HM8067A
- HM8067
- HM8064
- HM80-60002
- HM8054
- HM8053
- HM8052
- HM8051
- HM80-50004
- HM8040-3
- HM80-40010
- HM8037
- HM80-30008
- HM8021-4
- HM80-20014
- HM80-18007
- HM8018
- HM80-17006
- HM80-16012
- HM80-15013
- HM80-14003
- HM80-13006
- HM80-12007
- HM8012
HM80N06K数据表相关新闻
HMC1063LP3E
进口代理
2025-8-14HM658128ALFP
www.jskj-ic.com
2021-9-9HMC1040LP3CE 射频放大器 贸泽微优势
HMC1040LP3CE 射频放大器 贸泽微优势
2020-10-16HM5905
HM5905，全新原装当天发货或门市自取0755-82732291.
2020-3-27HM5116400CS6Z
HM5116400CS6Z
2019-11-1HMA121CR3-全间距微型扁平封装4针光耦合器
HMA121CR3-全间距微型扁平封装4针光耦合器 HMA124，HMA121系列和HMA2701系列由砷化镓红外发光二极管驱动在一个紧凑的4针微型扁平封装的硅光电晶体管。引线间距为2.54毫米。 HMAA2705由两个砷化镓红外发光二极管反向并联连接，驾驶一个单一的硅光电晶体管在一个紧凑的4针微型扁平封装。引线间距2.54毫米 应用 HMAA2705 •交流线路监控 •未知极性直流传感器 •电话线接收器 HMA121系列，HMA2701系列，HMA124
2012-11-7
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
- P110
