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HM8067A

3mA-600mA Linear Li-ion battery charger

文件:1.08835 Mbytes Page:14 Pages

HMSEMI

华之美半导体

High Gain Bandwidth Product Precision Fast FET??Op Amp

GENERAL DESCRIPTION The AD8067 FastFET amp is a voltage feedback amplifier with FET inputs offering wide bandwidth (54 MHz @ G = +10) and high slew rate (640 V/µs). The AD8067 is fabricated in a proprietary, dielectrically isolated eXtra Fast Complementary Bipolar process (XFCB) that enables high

AD

亚德诺

High Gain Bandwidth Product Precision Fast FET??Op Amp

GENERAL DESCRIPTION The AD8067 FastFET amp is a voltage feedback amplifier with FET inputs offering wide bandwidth (54 MHz @ G = +10) and high slew rate (640 V/µs). The AD8067 is fabricated in a proprietary, dielectrically isolated eXtra Fast Complementary Bipolar process (XFCB) that enables high

AD

亚德诺

High Gain Bandwidth Product Precision Fast FET??Op Amp

GENERAL DESCRIPTION The AD8067 FastFET amp is a voltage feedback amplifier with FET inputs offering wide bandwidth (54 MHz @ G = +10) and high slew rate (640 V/µs). The AD8067 is fabricated in a proprietary, dielectrically isolated eXtra Fast Complementary Bipolar process (XFCB) that enables high

AD

亚德诺

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

ADPOW

NL27WZ04 Dual Gate Inverter Oscillator Increases the Brightness of LEDs While Reducing Power Consumption

文件:62.81 Kbytes Page:8 Pages

ONSEMI

安森美半导体

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