Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

POWER MOS V 800V 11.5A 0.670 Ohm

High Gain Bandwidth Product, Precision Fast FET™ Op Amp

FEATURES FET input amplifier: 0.6 pA input bias current Stable for gains ≥8 High speed 54 MHz, −3 dB bandwidth (G = +10) 640 V/μs slew rate Low noise 6.6 nV/√Hz 0.6 fA/√Hz Low offset voltage (1.0 mV max) Wide supply voltage range: 5 V to 24 V No phase reversal Low input capacitance Si

High Gain Bandwidth Product Precision Fast FET??Op Amp

GENERAL DESCRIPTION The AD8067 FastFET amp is a voltage feedback amplifier with FET inputs offering wide bandwidth (54 MHz @ G = +10) and high slew rate (640 V/µs). The AD8067 is fabricated in a proprietary, dielectrically isolated eXtra Fast Complementary Bipolar process (XFCB) that enables high

Common Mode Chokes

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RF filter

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High Gain Bandwidth Product, Precision Fast FET??Op Amp

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