32768-word x 8-bit High Speed CMOS Static RAM

Features • High speed: Fast Access time 85/100/120/150 ns (max) • Low Power Standby: 200 µW (typ)/ 10µW (L/L-SL version) Operation: 40 mW (typ) (f = 1 MHz) • Single 5 V supply • Completely static RAM : No clock or timing strobe required • Equal access and cycle times • Common data inpu

32768-word x 8-bit High Speed CMOS Static RAM

Features • High speed: Fast Access time 85/100/120/150 ns (max) • Low Power Standby: 200 µW (typ)/ 10µW (L/L-SL version) Operation: 40 mW (typ) (f = 1 MHz) • Single 5 V supply • Completely static RAM : No clock or timing strobe required • Equal access and cycle times • Common data inpu

32768-word x 8-bit High Speed CMOS Static RAM

Features • High speed: Fast Access time 85/100/120/150 ns (max) • Low Power Standby: 200 µW (typ)/ 10µW (L/L-SL version) Operation: 40 mW (typ) (f = 1 MHz) • Single 5 V supply • Completely static RAM : No clock or timing strobe required • Equal access and cycle times • Common data inpu

32768-word x 8-bit High Speed CMOS Static RAM

Features • High speed: Fast Access time 85/100/120/150 ns (max) • Low Power Standby: 200 µW (typ)/ 10µW (L/L-SL version) Operation: 40 mW (typ) (f = 1 MHz) • Single 5 V supply • Completely static RAM : No clock or timing strobe required • Equal access and cycle times • Common data inpu

32768-word x 8-bit High Speed CMOS Static RAM

Features • High speed: Fast Access time 85/100/120/150 ns (max) • Low Power Standby: 200 µW (typ)/ 10µW (L/L-SL version) Operation: 40 mW (typ) (f = 1 MHz) • Single 5 V supply • Completely static RAM : No clock or timing strobe required • Equal access and cycle times • Common data inpu

32768-word x 8-bit High Speed CMOS Static RAM

Features • High speed: Fast Access time 85/100/120/150 ns (max) • Low Power Standby: 200 µW (typ)/ 10µW (L/L-SL version) Operation: 40 mW (typ) (f = 1 MHz) • Single 5 V supply • Completely static RAM : No clock or timing strobe required • Equal access and cycle times • Common data inpu

32768-word x 8-bit High Speed CMOS Static RAM

Features • High speed: Fast Access time 85/100/120/150 ns (max) • Low Power Standby: 200 µW (typ)/ 10µW (L/L-SL version) Operation: 40 mW (typ) (f = 1 MHz) • Single 5 V supply • Completely static RAM : No clock or timing strobe required • Equal access and cycle times • Common data inpu

32Kx8 bit Low Power CMOS Static RAM

FEATURES · Process Technology : 0.7mm CMOS · Organization : 32Kx8 · Power Supply Voltage : Single 5V±10% · Low Data Retention Voltage : 2V(Min) · Three state output and TTL Compatible · Package Type : 28-DIP-600, 28-SOP-450, 28-TSOP1 -0813.4F/R The KM62256C family is fabricated by SA

32K x 8 CMOS Static RAM

256K (32K x 8) Static RAM

Functional Description The CY62256 is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Features • 4.5V–5.5V Operation • Low active power (70 ns, LL version) — 275 mW (max.) • Low standby power (70 ns, LL version) — 28 µW (max.) • 55, 70 ns access time • Easy

32Kx8 bit Low Power CMOS Static RAM

文件：158.25 Kbytes Page：9 Pages

256K (32K x 8) Static RAM

文件：478.64 Kbytes Page：14 Pages