P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -50A RDS(ON)

P沟道 中压大电流MOS

P-Channel Enhancement Mode Power MOSFET

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)1= 17 mΩMAX. (VGS= −10 V, ID= −25 A) RDS(on)2= 23 mΩMAX. (VGS= −4.5 V, ID= −25 A) •Low input capacitance

P-Channel 60 V (D-S) MOSFET

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50A, 600V - 1000V Glass Passivated Bridge Rectifiers

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Glass Passivated Bridge Rectifiers

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-50A, -60V P-CHANNEL (D-S) POWER MOSFET

文件：144.02 Kbytes Page：3 Pages