丝印代码：50P06；-60V P-Channel MOSFET

APPLICATIONS Load Switch

丝印代码：50P06；-60V P-Channel MOSFET

PRODUCT SUMMARY VDS (V) = -60V RDS(ON)

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)1= 17 mΩMAX. (VGS= −10 V, ID= −25 A) RDS(on)2= 23 mΩMAX. (VGS= −4.5 V, ID= −25 A) •Low input capacitance

P-Channel 60-V (D-S), 175C MOSFET

文件：43.68 Kbytes Page：4 Pages

-50A, -60V P-CHANNEL (D-S) POWER MOSFET

文件：144.02 Kbytes Page：3 Pages

Isc P-Channel MOSFET Transistor

文件：267.08 Kbytes Page：2 Pages

P-Ch Enhancement Mode Power MOSFET

文件：128.889 Kbytes Page：2 Pages

P-Channel 60 V (D-S) MOSFET

文件：971.65 Kbytes Page：7 Pages

丝印代码：50P06-15；P-Channel 60-V (D-S) MOSFET

FEATURES RDS(ON) 14mQ@VGs=-10V (Typ) RDs(ON) 16mQ@VaGs=-4.5V(Typ) Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)1= 17 mΩMAX. (VGS= −10 V, ID= −25 A) RDS(on)2= 23 mΩMAX. (VGS= −4.5 V, ID= −25 A) •Low input capacitance

Glass Passivated Bridge Rectifiers

文件：234.96 Kbytes Page：4 Pages

50A, 600V - 1000V Glass Passivated Bridge Rectifiers

文件：210.87 Kbytes Page：4 Pages

-50A, -60V P-CHANNEL (D-S) POWER MOSFET

文件：144.02 Kbytes Page：3 Pages