-50A, -60V P-CHANNEL (D-S) POWER MOSFET

The UTC UTT50P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstandhigh energy in the avalanche.This UTC UTT50P06 is suitable for load switch,etc. • VDS = -60V\n• RDS(ON)=0.012Ω @ VGS=-10V, ID=-17A\n• High Switching Speed;

-50A, -60V P-CHANNEL (D-S) POWER MOSFET

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-35A, -60V P-CHANNEL (D-S)  POWER MOSFET

The UTC UTT50P06-H is a P-channel power MOSFET usingUTC’s advanced technology to provide the customers with highswitching speed and a minimum on-state resistance, andwithstand high energy pulse in the avalanche and commutationmode. The UTC UTT50P06-H well suited for high efficiency fastswitching app RDS(ON)< 30mΩ @ VGS=-10V, ID=-8.0ARDS(ON)< 40mΩ @ VGS=-4.5V, ID=-6.0A Fast switching Green Device Available Suit for -4.5V Gate Drive Applications;

P-CHANNEL (D-S) POWER MOSFET

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P-CHANNEL (D-S) POWER MOSFET

文件：177.25 Kbytes Page：4 Pages

P-CHANNEL (D-S) POWER MOSFET

文件：177.25 Kbytes Page：4 Pages

P-CHANNEL (D-S) POWER MOSFET

文件：177.25 Kbytes Page：4 Pages

P-CHANNEL (D-S) POWER MOSFET

文件：177.25 Kbytes Page：4 Pages

P-CHANNEL (D-S) POWER MOSFET

文件：177.25 Kbytes Page：4 Pages

-50A, -60V P-CHANNEL (D-S) POWER MOSFET

文件：144.02 Kbytes Page：3 Pages

P-CHANNEL (D-S) POWER MOSFET

文件：177.25 Kbytes Page：4 Pages

P-CHANNEL (D-S) POWER MOSFET

文件：177.25 Kbytes Page：4 Pages

P-CHANNEL (D-S) POWER MOSFET

文件：177.25 Kbytes Page：4 Pages

P-CHANNEL (D-S) POWER MOSFET

文件：177.25 Kbytes Page：4 Pages

P-CHANNEL (D-S) POWER MOSFET

文件：177.25 Kbytes Page：4 Pages

P-CHANNEL (D-S) POWER MOSFET

文件：177.25 Kbytes Page：4 Pages

P-CHANNEL (D-S) POWER MOSFET

文件：177.25 Kbytes Page：4 Pages

-50A, -60V P-CHANNEL (D-S) POWER MOSFET

文件：144.02 Kbytes Page：3 Pages

P-CHANNEL (D-S) POWER MOSFET

文件：177.25 Kbytes Page：4 Pages

P-CHANNEL (D-S) POWER MOSFET

文件：177.25 Kbytes Page：4 Pages

P-CHANNEL (D-S) POWER MOSFET

文件：177.25 Kbytes Page：4 Pages

P-CHANNEL (D-S) POWER MOSFET

文件：177.25 Kbytes Page：4 Pages

P-CHANNEL (D-S) POWER MOSFET

文件：177.25 Kbytes Page：4 Pages

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)1= 17 mΩMAX. (VGS= −10 V, ID= −25 A) RDS(on)2= 23 mΩMAX. (VGS= −4.5 V, ID= −25 A) •Low input capacitance

P-Channel 60 V (D-S) MOSFET

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Glass Passivated Bridge Rectifiers

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50A, 600V - 1000V Glass Passivated Bridge Rectifiers

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