型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●GreenDeviceAvailable Applications: ●Li-BatteryManagementSystem ●USBPowerDelivery ●BLDCDrive ●SynchronousRectifica | ADVAdvanced (Shenzhen) Electronics Co.,Ltd 爱德微爱德微(深圳)电子有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,12.8A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,12.8A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-Channel100-V(D-S)MOSFET 文件:773.51 Kbytes Page:6 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor 文件:354.05 Kbytes Page:4 Pages | CETChino-Excel Technology 华瑞华瑞股份有限公司 |
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CET |
24+ |
50000 |
|||||
- |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
CET |
24+ |
TO-263 |
90000 |
进口原装现货假一罚十价格合理 |
|||
SR |
23+ |
T0-263 |
5000 |
原装正品,假一罚十 |
|||
CET |
23+ |
TO-263 |
7300 |
专注配单,只做原装进口现货 |
|||
CET |
23+ |
TO-263 |
7300 |
专注配单,只做原装进口现货 |
|||
CET |
25+ |
TO-263 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
哈里斯 |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
CET/華瑞 |
2022+ |
TO-263 |
50000 |
原厂代理 终端免费提供样品 |
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