1024 x 4 CMOS RAM

Description The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On-chip latches are provided for addresses allowing efficient interfacing with microproc

1024 x 4 CMOS RAM

• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power Standby . . . . . . . . . . . . . . . . . . . 125W Max • Low Power Operation. . . . . . . . . . . . . . 35mW/MHz Max • Data Retention . . . . . . . . . . . . .

1024 x 4 CMOS RAM

• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power Standby . . . . . . . . . . . . . . . . . . . 125W Max • Low Power Operation. . . . . . . . . . . . . . 35mW/MHz Max • Data Retention . . . . . . . . . . . . .

1024 x 4 CMOS RAM

文件：193.57 Kbytes Page：9 Pages

1024x4 CMOS RAM

1024 x 4 CMOS RAM

文件：193.57 Kbytes Page：9 Pages

1024 x 4 CMOS RAM

文件：193.57 Kbytes Page：9 Pages

Programmable Electrometer

文件：299.57 Kbytes Page：4 Pages

SPI bus 64Kbit Serial CMOS EEPROM

文件：135.73 Kbytes Page：18 Pages

SPI bus 64Kbit Serial CMOS EEPROM

文件：131.4 Kbytes Page：18 Pages

SPI bus 64Kbit Serial CMOS EEPROM

文件：131.4 Kbytes Page：18 Pages

SPI bus 64Kbit Serial CMOS EEPROM

文件：135.73 Kbytes Page：18 Pages