Silicon N Channel MOS FET Power Switching

Features • Low on-resistance RDS(on) = 100 mΩ typ (VGS = 4.5 V, ID = 1.2 A) • Low drive current • High speed switching • 2.5 V gate drive

Silicon N Channel MOS FET Power Switching

Features • Low on-resistance RDS(on) = 100 mΩ typ (VGS = 4.5 V, ID = 1.2 A) • Low drive current • High speed switching • 2.5 V gate drive

Silicon N Channel MOS FET Power Switching

文件：105.14 Kbytes Page：7 Pages

Silicon N Channel MOS FET Power Switching

文件：105.14 Kbytes Page：7 Pages

ACTUATOR, SWITCH, SQUARE, LATCH RoHS : Compliant

Illuminated or non-illuminated pushbutton switches Panel cut-out Ø 22 (.866) or 29,5 x 21,5 (1.160x.846)

2.54mm (.100) Pitch C-Grid짰 Header, Dual Row, Shrouded, with PC Slot and Guide Ear, 24 Circuits, 0.38關m (15關) Gold (Au) Selective Plating

文件：247.54 Kbytes Page：3 Pages

2.54mm (.100) Pitch C-Grid짰 Header, Dual Row, Shrouded, with PC Slot and Guide Ear, 60 Circuits, Tn (Sn) Plating

文件：234.46 Kbytes Page：3 Pages

3.3 5V Limiting Amplifier for Applications from 100 Mbps to 1.25 Gbps

文件：467.45 Kbytes Page：27 Pages

Thin Film Mini-MELF Resistors

文件：179.02 Kbytes Page：12 Pages