Silicon N Channel MOS FET Power Switching

Features • Low on-resistance RDS(on) = 68 mΩ typ (VGS = 4.5 V, ID = 1.5 A) • Low drive current • High speed switching • 2.5 V gate drive

Silicon N Channel MOS FET Power Switching

Silicon N Channel MOS FET Power Switching

Features • Low on-resistance RDS(on) = 68 mΩ typ (VGS = 4.5 V, ID = 1.5 A) • Low drive current • High speed switching • 2.5 V gate drive

Silicon N Channel MOS FET Power Switching

文件：104.54 Kbytes Page：7 Pages

20V, 2.9A, 90m?뾪ax Silicon N Channel MOS FET Power Switching

文件：104.54 Kbytes Page：7 Pages

Silicon N Channel MOS FET Power Switching

文件：104.54 Kbytes Page：7 Pages

ACTUATOR, SWITCH, SQUARE, LATCH RoHS : Compliant

Illuminated or non-illuminated pushbutton switches Panel cut-out Ø 22 (.866) or 29,5 x 21,5 (1.160x.846)

ACTUATOR, SWITCH, SQUARE, LATCH RoHS : Compliant

Illuminated or non-illuminated pushbutton switches Panel cut-out Ø 22 (.866) or 29,5 x 21,5 (1.160x.846)

Low Skew Output Buffer

DESCRIPTION The ABB0203 is a high performance, low skew, low jitter zero delay buffer designed to distribute high speed clocks and is available in an 8-pin SOIC package. It has four outputs that are synchronized with the input. The synchronization is established via CLKOUT feed back to the input

Low Skew Output Buffer

DESCRIPTION The ABB0203 is a high performance, low skew, low jitter zero delay buffer designed to distribute high speed clocks and is available in an 8-pin SOIC package. It has four outputs that are synchronized with the input. The synchronization is established via CLKOUT feed back to the input

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：71.73 Kbytes Page：5 Pages