5V Powered RS-232 Transmitters/Receivers with 0.1Microfarad External Capacitors

The HIN202, HIN206, HIN207, HIN208, HIN211, HIN213 family of RS-232 transmitters/receivers interface circuits meet all ElA RS-232E and V.28 specifications, and are particularly suited for those applications where ±12V is not available. They require a single +5V power supply and feature onboard cha

5V Powered RS-232 Transmitters/Receivers with 0.1Microfarad External Capacitors

+5V Powered RS-232 Transmitters/Receivers with 0.1Microfarad External Capacitors The HIN202, HIN206, HIN207, HIN208, HIN211, HIN213 family of RS-232 transmitters/receivers interface circuits meet all ElA RS-232E and V.28 specifications, and are particularly suited for those applications where 12

封装/外壳：28-SSOP（0.209"，5.30mm 宽） 包装：管件 描述：IC TRANSCEIVER FULL 4/5 28SSOP 集成电路（IC） 驱动器，接收器，收发器

5V Powered RS-232 Transmitters/Receivers with 0.1Microfarad External Capacitors

+5V Powered RS-232 Transmitters/Receivers with 0.1Microfarad External Capacitors The HIN202, HIN206, HIN207, HIN208, HIN211, HIN213 family of RS-232 transmitters/receivers interface circuits meet all ElA RS-232E and V.28 specifications, and are particularly suited for those applications where 12

5V Powered RS-232 Transmitters/Receivers with 0.1Microfarad External Capacitors

The HIN202, HIN206, HIN207, HIN208, HIN211, HIN213 family of RS-232 transmitters/receivers interface circuits meet all ElA RS-232E and V.28 specifications, and are particularly suited for those applications where ±12V is not available. They require a single +5V power supply and feature onboard cha

封装/外壳：28-SSOP（0.209"，5.30mm 宽） 包装：管件 描述：IC TRANSCEIVER FULL 4/5 28SSOP 集成电路（IC） 驱动器，接收器，收发器

Amlifier Transistors (PNP)

Amplifier Transistors PNP Silicon

丝印代码：D213；DUAL CHANNEL SMALL OUTLINE OPTOISOLATOR TRANSISTOR OUTPUT

This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications and eliminates the need for through–the–board moun

Germanium PNP Transistor High Power, High Gain Amplifier

Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment.

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

1024- 횞 512-pixel ccd image sensor

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