72A, 1200V, NPT Series N-Channel IGBT

The HGTG27N120BN and HGT5A27N120BN are NonPunch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduct

72A, 1200V, NPT Series N-Channel IGBT

The HGTG27N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bip

IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.7V@IC=34A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Synchronous Rectification in SMPS ·Automotive Chargers ·UPS,PFC ·High Voltage Auxiliaries

封装/外壳：TO-247-3 包装：管件 描述：IGBT NPT 1200V 72A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

1200V，NPT IGBT

72A, 1200V, NPT Series N-Channel IGBT

文件：178.54 Kbytes Page：8 Pages

72A, 1200V, NPT Series N-Channel IGBT

文件：178.54 Kbytes Page：8 Pages

72A, 1200V, NPT Series N-Channel IGBT

文件：178.54 Kbytes Page：8 Pages

72A, 1200V, NPT Series N-Channel IGBT

文件：178.54 Kbytes Page：8 Pages