位置：首页 > IC中文资料第3081页 > HGT1S20N60B3S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGT1S20N60B3S | 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. T | Fairchild 仙童半导体 |   | |
HGT1S20N60B3S | 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor | Intersil | | |
HGT1S20N60B3S | 40A, 600V, UFS Series N-Channel IGBTs | ONSEMI 安森美半导体 | |
HGT1S20N60B3S产品属性
- 类型
描述
- 型号
HGT1S20N60B3S
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
- 制造商
Harris Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
18+ |
TO-262 |
5000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHIL.. |
23+ |
TO-263.. |
3200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
ON |
06+ |
20 |
|||||
ON/安森美 |
21+ |
SMD |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
onsemi(安森美) |
24+ |
TO263AB |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
FAIRCHILD/仙童 |
23+ |
97612 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
Intersil |
24+ |
TO-263 |
8866 |
||||
FAIRCHILD |
25+ |
199 |
公司优势库存 热卖中! |
||||
HARRIS |
05+ |
原厂原装 |
4609 |
只做全新原装真实现货供应 |
|||
TI |
20+ |
NA |
53650 |
TI原装主营-可开原型号增税票 |
HGT1S20N60B3S芯片相关品牌
HGT1S20N60B3S规格书下载地址
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DdatasheetPDF页码索引
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