位置：首页 > IC中文资料第3741页 > HGT1S12N60A4S9A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGT1S12N60A4S9A | 600V, SMPS Series N-Channel IGBTs The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-stat | FAIRCHILD 仙童半导体 |   | |
HGT1S12N60A4S9A | 600V, SMPS Series N-Channel IGBTs | ONSEMI 安森美半导体 | |
HGT1S12N60A4S9A产品属性
- 类型
描述
- 型号
HGT1S12N60A4S9A
- 功能描述
IGBT 晶体管 600V N-Channel IGBT SMPS Series
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
24+ |
DIP |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
|||
FAIRCHILD |
25+23+ |
DIP |
30011 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
INTERSIL |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
24+ |
N/A |
75000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VISHAY/威世 |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
Fairchild/ON |
23+ |
TO263AB |
8000 |
只做原装现货 |
|||
FAIRCHILD |
24+ |
TO-263(D2PAK) |
8866 |
||||
FAIRCHILD |
05+ |
原厂原装 |
5011 |
只做全新原装真实现货供应 |
|||
Fairchild/ON |
22+ |
TO263AB |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHILD/仙童 |
25+ |
DIP |
860000 |
明嘉莱只做原装正品现货 |
HGT1S12N60A4S9A芯片相关品牌
HGT1S12N60A4S9A规格书下载地址
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HGT1S12N60A4S9A数据表相关新闻
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2020-11-25HGDESM021A
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2020-11-13HHC67E-1H-12VDC
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2020-4-20HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
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DdatasheetPDF页码索引
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