位置：首页 > IC中文资料第3741页 > HGT1S12N60A4S9A
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGT1S12N60A4S9A | 600V, SMPS Series N-Channel IGBTs The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-stat | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   |
HGT1S12N60A4S9A产品属性
- 类型
描述
- 型号
HGT1S12N60A4S9A
- 功能描述
IGBT 晶体管 600V N-Channel IGBT SMPS Series
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HAR |
24+ |
NA/ |
1400 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
HAR |
2023+ |
TO-263 |
1400 |
十五年行业诚信经营,专注全新正品 |
|||
HARRIS/哈里斯 |
25+ |
TO-263 |
57488 |
百分百原装现货 实单必成 欢迎询价 |
|||
FAIRCHILD/仙童 |
22+ |
TO-262 |
100000 |
代理渠道/只做原装/可含税 |
|||
HAR |
18+ |
TO-263 |
1400 |
||||
FAIRCHILD |
23+ |
DIP |
999999 |
原装正品现货量大可订货 |
|||
FAIRCHILD |
25+23+ |
DIP |
30011 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
FAIRCHILD |
24+ |
TO-263(D2PAK) |
8866 |
||||
FAIRCHI |
21+ |
TO-220 |
12588 |
原装正品,自己库存 假一罚十 |
|||
FAIRCHILD |
19+ |
DIP |
20000 |
1000 |
HGT1S12N60A4S9A芯片相关品牌
HGT1S12N60A4S9A规格书下载地址
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HGT1S12N60A4S9A数据表相关新闻
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2020-11-25HGDESM021A
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2020-11-13HHC67E-1H-12VDC
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2020-4-20HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
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DdatasheetPDF页码索引
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