位置：首页 > IC中文资料 > HGI170N10A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGI170N10A | 100V SGT | HUNTECK 恒泰柯半导体 |   | |
100V SGT | HUNTECK 恒泰柯半导体 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant. | CET-MOS 华瑞 | | ||
100V N-Channel Power Mosfet 文件：3.11699 Mbytes Page：4 Pages | FOSTER 福斯特半导体 | | ||
N-Channel Power MOSFET 文件：2.24483 Mbytes Page：4 Pages | FOSTER 福斯特半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CLARE |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
COTO TECHNOLOGY |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
HLJ |
2450+ |
SOP |
6540 |
只做原厂原装现货或订货假一赔十! |
|||
Hunteck(恒泰柯) |
20+ |
TOP-247 |
30 |
||||
COYO |
24+ |
N/A |
90000 |
原厂正规渠道价格更有优势假一罚十 |
|||
HGJ2MT54211L00 |
25+ |
3 |
3 |
||||
CLARE |
23+ |
模块 |
450 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
QQ咨询 |
DIP |
108 |
全新原装 研究所指定供货商 |
||||
GI |
新 |
123 |
全新原装 货期两周 |
HGI170N10A规格书下载地址
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HGI170N10A数据表相关新闻
HFV7-P/012-HST
HFV7-P/012-HST
2023-3-23HGTG11N120CND绝对全新原装正品特价销售
HGTG11N120CND 绝对全新原装正品特价销售
2022-10-27HGT1S10N120BNST中文产品资料功能描述
HGT1S10N120BNST中文产品资料
2022-6-6HGTG11N120CND保证原装假一赔十
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2020-11-25HGDESM021A
https://hch01.114ic.com/
2020-11-13HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
HG4119/048-1Z11，HG51B218FS，HG52E24AFD，HG62E08R74FB，HG62E43R76FS，
2020-1-13
DdatasheetPDF页码索引
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