型号 功能描述 生产厂家&企业 LOGO 操作
HFP4N65F

650V N-Channel MOSFET

Features ❐ Originative New Design ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ 100 Avalanche Tested ❐ RoHS Compliant

SEMIHOW

4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

UTC

友顺

Power MOSFET

文件:1.07616 Mbytes Page:9 Pages

VBSEMI

微碧半导体

650V N-Channel Power MOSFET

文件:2.82624 Mbytes Page:10 Pages

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

Drain Current ID= 4A@ TC=25C

文件:136.78 Kbytes Page:2 Pages

ISC

无锡固电

N-CHANNEL POWER MOSFET

文件:607.6 Kbytes Page:7 Pages

ZSELEC

淄博圣诺电子

更新时间:2025-8-8 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SEMIHOW
24+
NA/
53250
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SEMIWE
2016+
TO-220
3900
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25+
TO220
54648
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SEMIHOW
20+
TO-220
38900
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SEMIHOW
24+
TO220
990000
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SemiHOW
25+
TO-220
4500
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SEMIHOW
23+
TO-220
6800
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SEMIHOW
24+
TO-220
3200
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S
23+
TO-220
58000
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SEMIWE
2223+
TO-220
26800
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