Surface Mount Glass Passivated High Efficiency Rectifiers Reverse Voltage 50 to 1000V Forward Current 2.0A

FEATURES * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Ideally suited for use in very high frequency switching * power supplies, inverters and as free wheeling diodes * Ultrafast recovery time for high efficiency * Excellent high temperature switching *

SURFACE MOUNT HIGH EFFICIENCY RECTIFIER DIODES

Features • Glass Passivated Die Construction • Ideally Suited for Automatic Assembly • Low Forward Voltage Drop, High Efficiency • Low Power Loss • Ultra-Fast Recovery Time • Plastic Case Material has UL Flammability Classification Rating 94V-O

Chip High Effciency Rectifiers

2.0A Surface Mount High Effciency Rectifiers-50-1000V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • High current capability. • Ultrafast r

2A 200V Fast recovery diode

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Plastic package has Underwriters Laboratory

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SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes)

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Ultra fast recovery type

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High Efficiency Rectifiers

SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes

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Fast Recovery Rectifiers

Chip High Effciency Rectifiers

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Ultra Fast

SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Ampere

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Chip Silicon Rectifier - Ultra fast recovery type

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Chip High Effciency Rectifiers

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SURFACE MOUNT HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes

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P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.