超小型中功率继电器

• 具有两组常开、两组转换触点形式 \n• 低高度，仅为15.7mm \n• 线圈与触点间介质耐压5KV \n• 爬电距离/空气间隙大于10mm，满足加强绝缘要求 \n• 可提供符合IEC60335-1标准产品 \n• UL绝缘等级：F级 \n• 环保产品(符合RoHS) \n• 外形尺寸：29.0mm x 19.6mm x 15.7mm;

MINIA TURE HIGH POWER RELAY

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N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

Silicon Complementary Transistors High Voltage, Medium Power Switch

Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Fea

L-Band PA DRIVER AMPLIFIER

DESCRIPTION µPG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. FEATURES • Low Operation Voltage: