16Ampere Heat Sink Dual Doubler Polarity High Efficiency Rectifiers

Features ♦ Low forward voltage drop ♦ Fast switching for high efficiency ♦ High current capability ♦ High surge current capability ♦ Low reverse leakage current Application ♦ Automotive Inverters and Solar Inverters ♦ Plating Power Supply,SMPS and UPS ♦ Car Audio Amplifiers and Sound Devi

MICROWAVE POWER GaAs FET

High-power GaAs FET (small signal gain stage) S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic

Silicon PNP(NPN) epitaxial planer transistor

Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages