包装：散装 描述：AEAT-9955 PROG KIT EVAL BOARD 开发板，套件，编程器 评估板 - 传感器

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 50V, 3A, RDS(ON) = 130mΩ @VGS = 10V. RDS(ON) = 200mΩ @VGS = 4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handing capability. ● Surface Mount Package.

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These

Cat 5e UTP Patch Cable

文件：45.83 Kbytes Page：1 Pages

Smart, simple solutions for the 12 most common design concerns

16-channel Fm I2C-bus 57 mA constant current LED driver

文件：1.04906 Mbytes Page：48 Pages