8-input NAND Gates

Features • High Speed Operation: tpd = 11 ns typ (CL = 50 pF) • High Output Current: Fanout of 10 LSTTL Loads • Wide Operating Voltage: VCC = 2 to 6 V • Low Input Current: 1 µA max • Low Quiescent Supply Current: ICC (static) = 1 µA max (Ta = 25°C)

8-input NAND gate

GENERAL DESCRIPTION The 74HC/HCT30 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT30 provide the 8-input NAND function. FEATURES • Output capability: standard • ICC categ

8-input NAND gate

GENERAL DESCRIPTION The 74HC/HCT30 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT30 provide the 8-input NAND function. FEATURES • Output capability: standard • ICC categ

8-input NAND gate

GENERAL DESCRIPTION The 74HC/HCT30 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT30 provide the 8-input NAND function. FEATURES • Output capability: standard • ICC categ

8 INPUT NAND GATE

DESCRIPTION The M54/74HC30 is a high speed CMOS 8-INPUT NAND GATE fabricated with silicon gate C2MOS technology. ■ HIGH SPEED tPD = 12 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VNIL = 28 VCC (MIN.) ■ OUTPUT DRIVE CAPABILITY 10

8-INPUT NAND GATE

DESCRIPTION The M54/74HC30 is a high speed CMOS 8-INPUT NAND GATE fabricated with silicon gate C2MOS technology. ■ HIGH SPEED tPD = 12 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VNIL = 28 VCC (MIN.) ■ OUTPUT DRIVE CAPABILITY 10