8-input NAND gate

GENERAL DESCRIPTION The 74HC/HCT30 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT30 provide the 8-input NAND function. FEATURES • Output capability: standard • ICC categ

封装/外壳：14-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：IC GATE NAND 1CH 8-INP 14DIP 集成电路（IC） 门和反相器

8-input NAND gate

GENERAL DESCRIPTION The 74HC/HCT30 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT30 provide the 8-input NAND function. FEATURES • Output capability: standard • ICC categ

8-input NAND gate

GENERAL DESCRIPTION The 74HC/HCT30 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC/HCT30 provide the 8-input NAND function. FEATURES • Output capability: standard • ICC categ

8 INPUT NAND GATE

DESCRIPTION The M54/74HC30 is a high speed CMOS 8-INPUT NAND GATE fabricated with silicon gate C2MOS technology. ■ HIGH SPEED tPD = 12 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VNIL = 28 VCC (MIN.) ■ OUTPUT DRIVE CAPABILITY 10

8-INPUT NAND GATE

DESCRIPTION The M54/74HC30 is a high speed CMOS 8-INPUT NAND GATE fabricated with silicon gate C2MOS technology. ■ HIGH SPEED tPD = 12 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 1 µA (MAX.) AT TA = 25 °C ■ HIGH NOISE IMMUNITY VNIH = VNIL = 28 VCC (MIN.) ■ OUTPUT DRIVE CAPABILITY 10