QUADRUPLE 2 INPUT NOR GATE

FEATURES • Quiescent Current = 0.5nA typ/pkg @5V • Noise Immunity = 45 of VDD typ • Capable of Driving Low-power Schottky TTL Load Over th Rated Temperature Range • Pin-for Pin Replacements for CD4001B and MC14001B Series

QUADRUPLE 2 INPUT NOR GATE

FEATURES • Quiescent Current = 0.5nA typ/pkg @5V • Noise Immunity = 45 of VDD typ • Capable of Driving Low-power Schottky TTL Load Over th Rated Temperature Range • Pin-for Pin Replacements for CD4001B and MC14001B Series

QUADRUPLE 2 INPUT NOR GATE

Quiescent Current = 0.5nA typ/pkg @5V\nNoise Immunity = 45 % of VDD typ\nCapable of Driving Low-power Schottky TTL Load Over th Rated temperture Range\nPin-for Pin replacememts for CD4001B and MC14001B Series

QUADRUPLE 2 INPUT NOR GATE

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS

High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes • DC Current Gain — hFE = 15–100 @ IC = 50 Adc • Low Collector–Emitter Saturation Voltage —

Quad 2-Input NOR,NAND Buffered B Series Gate

CMOS NOR Gates

Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate

CMOS NOR Gate

Quad 2-Input NOR(NAND) Buffered B Series Gate

Quad 2-Input NOR,NAND Buffered B Series Gate

Quad 2-Input NOR,NAND Buffered B Series Gate

Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate

CMOS NOR Gates

CMOS NOR Gates

Quad 2-Input NOR,NAND Buffered B Series Gate

NOR GATE

Quadruple 2-input NOR gate

Quadruple 2-input NOR gate

Quadruple 2-input NOR gate

Quadruple 2-input NOR gate

B-Suffix Series CMOS Gates

Single Supply Quad Comparators

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates

B-SUFFIX SERIES CMOS GATES

B−Suffix Series CMOS Gates

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates

B-SUFFIX SERIES CMOS GATES

B-Suffix Series CMOS Gates

UB-Suffix Series CMOS Gates

UB−Suffix Series CMOS Gates

COMPLEMENTARY METAL OXIDE SILICON

INPUT NOR GATE

Quad 2 Input NOR Gate

QUAD 2 INPUT NOR GATE