RadiationHardenedNon-InvertingOctalBuffer/LineDriver,Three-State

Description TheIntersilHCTS541MSisaRadiationHardenednoninvertingoctalbuffer/linedriver,three-stateoutputs.Theoutputenablepins(OEN1andOEN2)controlthethree-stateoutputs.Ifeitherenableishightheoutputswillbeinthehighimpedancestate.Fordataoutputbothenables(OE

RadiationHardenedNon-InvertingOctalBuffer/LineDriver,Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

HIGHPOWEROP-AMP

DESCRIPTION: TheMSK541Seriesisahighpowermonolithicamplifierideallysuitedforhighpoweramplificationandmagneticdeflectionapplications.Thisamplifieriscapableofoperationatasupplyvoltageratingof80voltsandcandeliverguaranteedcontinuousoutputcurrentsupto5A,maki

Pentium4ProcessorsSupportingHyper-ThreadingTechnology

Introduction TheIntel®Pentium®4processoron90nmprocessinthe775-landpackageisafollowontothePentium4processorinthe478-pinpackagewithenhancementstotheIntelNetBurst®microarchitecture.ThePentium4processoron90nmprocessinthe775-landpackageusesFlipChipLandGr

TREK541A

APPLICATIONS Semiconductor LCD Electronicassembly ESD-sensitiveprocesses

UltraLowJitterDualAny-FrequencyXO(125fs),0.2to1500MHz

KEYFEATURES •Availablewithanytwoselectablefrequencies from0.2MHzto1500MHz •Verylowjitter:125fsTypRMS (12kHz–20MHz) •ExcellentPSNRandsupplynoiseimmunity: –80dBcTyp •7ppmstabilityoption(-40to85C) •3.3V,2.5Vand1.8VVDDsupplyoperation fromthes

Capacity(20-hour)150Ah

文件：357.08 Kbytes Page：1 Pages