Radiation Hardened Octal Transparent Latch, Three-State

Description The Intersil HCS573MS is a Radiation Hardened octal transparent three-state latch with an active low output enable. The HCS573MS utilizes advanced CMOS/SOS technology. Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 ME

Radiation Hardened Octal Transparent Latch, Three-State

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

Radiation Hardened Octal Transparent Latch, Three-State

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

Radiation Hardened Octal Transparent Latch, Three-State

Description The Intersil HCS573MS is a Radiation Hardened octal transparent three-state latch with an active low output enable. The HCS573MS utilizes advanced CMOS/SOS technology. Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 ME

Octal D-type transparent latch with 5-volt tolerant inputs/outputs 3-State

DESCRIPTION The 74LVC573A is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3V or 5V devices. In 3-State operation, outputs can handle 5V. This feature allows the use of these devices as

Octal D-Type Latch with 3-State Outputs With 5 V?뭈olerant Inputs

The MC74LVX573 is an advanced high speed CMOS octal latch with 3−state outputs. The inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V systems to 3.0 V systems. This 8−bit D−type latch is controlled by a latch enable input and an output enable input. When the output enable inpu

Schottky Barrier Rectifier

Description: The NTE573 is an axial lead metal–to–silicon power diode using the Schottky Barrier principle. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. This device is ideally suited for use in low–voltage, high–frequency inverters, a

P-CHANNEL MOS FET 5-PIN 2 CIRCUITS FOR SWITCHING

P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING The µPA573T is a super-mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as SC-70 • Directly driven by ICs ha

OCTAL D-TYPE TRANSPARENT LATCHES WITH 3-STATE OUTPUTS

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