Radiation Hardened Quad 2-Input Multiplexers

Description The Intersil HCS157MS is a Radiation Hardened quad 2-input multiplexers which select four bits of data from two sources under the control of a common select input (S). The Enable input (E NOT) is active low. When the enable pin is high all of the outputs (1Y-4Y) are forced low regardl

Radiation Hardened Quad 2-Input Multiplexers

Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s, 20ns Pulse • La

Radiation Hardened Quad 2-Input Multiplexers

Features • 3 Micron Radiation Hardened CMOS SOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s, 20ns Pulse • La

Radiation Hardened Quad 2-Input Multiplexers

Description The Intersil HCS157MS is a Radiation Hardened quad 2-input multiplexers which select four bits of data from two sources under the control of a common select input (S). The Enable input (E NOT) is active low. When the enable pin is high all of the outputs (1Y-4Y) are forced low regardl

FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 400 to 1000 Volts CURRENT - 1.0 Ampere)

VOLTAGE 400 to 1000 Volts CURRENT 1.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Low leakage. • Exceeds environmental standards of MI

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

Quad 2-input multiplexer

DESCRIPTION The 74LVC157A is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 or 5 V devices. This feature allows the use of these devices as translators in a mixed 3.3 and 5 V env

MOS LINEAR RF POWER FET

Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45 (Typ)

Silicon NPN Transistor Audio Power Amp, High Voltage Converter (Compl to NTE39)

Description: The NTE157 is a silicon NPN transistor in a TO126 type package designed for use in line–operated equipment such as audio output amplifiers, low–current, high–voltage converters, and AC line relays. Features: Excellent DC Current Gain: hFE = 30 to 250 @ IC = 100mA Curre