位置：首页 > IC中文资料第6255页 > HCS05K
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HCS05K | Radiation Hardened Hex Inverter with Open Drain Description The Intersil HCS05MS is a Radiation Hardened Hex inverter function with open drain outputs. These open drain outputs can drive into resistive loads with a separate voltage supply. The HCS05MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a memb | Intersil |   | |
HCS05K | Radiation Hardened Triple 3-Input NAND Gate Description The Intersil HCS10MS is a Radiation Hardened Triple 3-Input NAND Gate. A high on all inputs forces the output to a Low state. The HCS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic F | Intersil | | |
HCS05K | Radiation Hardened Hex Inverter with Open Drain Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat | RENESAS 瑞萨 | | |
HCS05K | Radiation Hardened Triple 3-Input NAND Gate Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (SI)/s 20ns Pulse • Cos | RENESAS 瑞萨 | | |
Radiation Hardened Triple 3-Input NAND Gate Description The Intersil HCS10MS is a Radiation Hardened Triple 3-Input NAND Gate. A high on all inputs forces the output to a Low state. The HCS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic F | Intersil | | ||
Radiation Hardened Hex Inverter with Open Drain Description The Intersil HCS05MS is a Radiation Hardened Hex inverter function with open drain outputs. These open drain outputs can drive into resistive loads with a separate voltage supply. The HCS05MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a memb | Intersil | | ||
Radiation Hardened Hex Inverter with Open Drain Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat | RENESAS 瑞萨 | | ||
Radiation Hardened Triple 3-Input NAND Gate Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (SI)/s 20ns Pulse • Cos | RENESAS 瑞萨 | |
HCS05K产品属性
- 类型
描述
- 型号
HCS05K
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
Radiation Hardened Triple 3-Input NAND Gate
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISL |
05+ |
原厂原装 |
4287 |
只做全新原装真实现货供应 |
|||
H |
QQ咨询 |
CDIP |
72 |
全新原装 研究所指定供货商 |
|||
Microchip |
22+ |
8PDIP |
9000 |
原厂渠道,现货配单 |
|||
MICROCHIP/微芯 |
24+ |
8DIP |
7671 |
原装正品.优势专营 |
|||
24+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
H |
24+ |
CDIP |
200 |
进口原装正品优势供应 |
|||
Microchip Technology |
24+ |
8-PDIP |
38520 |
一级代理/放心采购 |
|||
MICROCHIP/微芯 |
25+ |
8DIP |
880000 |
明嘉莱只做原装正品现货 |
|||
SONICREST |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
|||
Microchip(微芯) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
HCS05K芯片相关品牌
HCS05K规格书下载地址
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HCS05K数据表相关新闻
HCSD-13-S-16.00-01-N-G只做原装货
HCSD-13-S-16.00-01-N-G只做原装货
2024-8-30HCPL-M601-500E
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HCPL-817-56CE
2023-3-1HC-SR04
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2021-1-14HD06-9N PANJIT/强茂 SOP4
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2020-11-14HCPL-817-560E
5000 Vrms NPN光电晶体管SMD-4 1通道70 V晶体管输出光电耦合器，SMD-DIP-16 4通道晶体管输出光电耦合器，+ 125 C-40 C晶体管输出光电耦合器，7500 Vrms 1通道晶体管输出光电耦合器，SOP-8晶体管输出光电耦合器，NPN光电晶体管SSOP-4 1通道晶体管输出光电耦合器
2020-7-17
DdatasheetPDF页码索引
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