Radiation Hardened Hex Inverter with Open Drain

Description The Intersil HCS05MS is a Radiation Hardened Hex inverter function with open drain outputs. These open drain outputs can drive into resistive loads with a separate voltage supply. The HCS05MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a memb

Radiation Hardened Triple 3-Input NAND Gate

Description The Intersil HCS10MS is a Radiation Hardened Triple 3-Input NAND Gate. A high on all inputs forces the output to a Low state. The HCS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic F

Radiation Hardened Hex Inverter with Open Drain

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

Radiation Hardened Triple 3-Input NAND Gate

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (SI)/s 20ns Pulse • Cos

Radiation Hardened Triple 3-Input NAND Gate

Description The Intersil HCS10MS is a Radiation Hardened Triple 3-Input NAND Gate. A high on all inputs forces the output to a Low state. The HCS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic F

Radiation Hardened Hex Inverter with Open Drain

Description The Intersil HCS05MS is a Radiation Hardened Hex inverter function with open drain outputs. These open drain outputs can drive into resistive loads with a separate voltage supply. The HCS05MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a memb

Radiation Hardened Hex Inverter with Open Drain

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Lat

Radiation Hardened Triple 3-Input NAND Gate

Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity 1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (SI)/s 20ns Pulse • Cos