PNP EPITAXIAL PLANAR TRANSISTOR

Description The HBC557 is designed for use in driver stage of audio amplifier applications. Features • High Breakdown Voltage: 45V • High AC Current Gain: 75-800 at IC=2mA

PNP EPITAXIAL PLANAR TRANSISTOR

Amplifier Transistors

Amplifier Transistors PNP Silicon

Amplifier Transistors(PNP Silicon)

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

Amplifier Transistors(PNP Silicon)

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

Amplifier Transistors

Amplifier Transistors PNP Silicon

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8.0 dB Efficiency 60 (Typ) • Cost Effective PowerMacro Pa