Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 6.0 mΩ typ. (at VGS = 10 V)

Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 6.3 mΩ typ. (at VGS = 10 V) • Power Supply for Server and Telecom (Indoor use)

Silicon N Channel Power MOS FET Power Switching

Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 6.3 mΩ typ. (at VGS = 10 V) • Power Supply for Server and Telecom (Indoor use)

Silicon N Channel Power MOS FET Power Switching

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Power MOSFETs

Silicon N Channel Power MOS FET Power Switching

文件：89.43 Kbytes Page：8 Pages

Silicon N Channel Power MOS FET Power Switching

文件：108.91 Kbytes Page：10 Pages

Silicon N Channel Power MOS FET Power Switching

文件：89.43 Kbytes Page：8 Pages

MOS(场效应管)

Silicon N Channel Power MOS FET Power Switching

CANopen / DeviceNet Data Single-Ended Cordset

Product Description CANopen / DeviceNet Data Single-Ended Cordset: M12 Standard, female, straight, 5-pin, A-coded, black body, 50 V AC / 60 V DC, 4 A; PUR black cable, 4-wires, Data: 2x0.25 mm² + Power: 2x0.34 mm²

Customer Specifications

Construction 1) Conductor a) Material Tinned Copper, per ASTMB-33 and CID-A-A-59551 b) Stranding Solid c) Diameter 0.005 2) Braid Data a) Nominal ID 11/64 (.171) b) AWG of Ends 36 c) Number of Carriers 24 d) Nominal Percent Coverage 96 e) Total Number of Ends 168 f) Approx. Equiv. AWG 1

4096 x 4 STATIC R/W RANDOM-ACCESS MEMORY

4096 x 4 Static R/W Random-Access Memory

IR Break Beam Sensor 5mm LEDs

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Metric Snap Bushings

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