Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting

Silicon N Channel Power MOS FET High Speed Power Switching

• Low on-resistance\n• Capable of 2.5 V gate drive\n• Low drive current\n• High density mounting ;

Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting

Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting

Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting

Dual N-Channel 30-V (D-S) MOSFET

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Power MOSFETs

Power switching MOSFET

Silicon N Channel Power MOS FET High Speed Power Switching

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Dual N-Channel 30-V (D-S) MOSFET

文件：1.16066 Mbytes Page：9 Pages

FM F/EAM/FM IFPW IC FOR DIGITAL TUNING SYSTEM

FM F/EAM/FM IFPW IC FOR DIGITAL TUNING SYSTEM

FM F/EAM/FM IFPW IC FOR DIGITAL TUNING SYSTEM

APPLICATION NOTE

GENERAL DESCRIPTION As depicted in Figure 1, the TEA2028 combines 3 major functions of a TV set as follows : - Horizontal (line) and vertical (frame) time base generation for spot deviation. The video signal is used for the synchronization of both time bases. - On-chip switching power sup

Timing Processor (LINE, FRAME, SMPS) for TV Sets

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