Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

Silicon N Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

Power MOSFETs

Power switching MOSFET

Silicon N Channel Power MOS FET High Speed Power Switching

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12 x Capacitive Touch Shield for Arduino - MPR121

o PCB Dimensions: 53mm x 68mm x 2mm / 2.1 x 2.7 x 0.08 o Height with Button: 5mm / 0.2

Digital Thermometers

Key Features and Benefits • Long battery life – typically 500 hours • Accurate performance – 0.2% of reading • Robust Case – Ensuring long life in demanding and harsh environments • Selectable auto switch‑off – saves on operational costs • Automatic zero calibration – for added accuracy

High Voltage High Current Darlington Arrays

HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS Ideally suited for interfacing between low-level logic circuitry and multiple peripheral power loads, the Series ULN20xxA/L high-voltage, high-current Darlington arrays feature continuous load current ratings to 500 mA for each of the seven drivers. At

Cypress Semiconductor

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Band 25 Rx, Band 26 Rx, Band 41 Rx Triplexer

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