Silicon P Channel Power MOS FET High Speed Power Switching

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Silicon P Channel Power MOS FET High Speed Power Switching

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Inst, 4 Tri #16 Str BC, PVC-NYL Ins E1, IS/OS, Blk PVC Jkt, 600V TC-ER 150V NPLF 90C Dry/Wet

Product Description UL Instrumentation, 4 Triad 16AWG (7x24) Bare Copper, PVC-NYL Insulation E1 Color Code, Individual & Overall Beldfoil® Shield, Black PVC Outer Jacket, 600V TC-ER 150V NPLF 90C Dry/Wet SUN RES DIR BUR

IRS2011 and IR2011 Comparison

Introduction The IRS2011 is a new HVIC product that replaces the IR2011 and is pin-to-pin compatible with its predecessor. This application note describes the various differences between the IRS2011 and the IR2011 HVICs. The IRS2011 is a high power, high speed power MOSFET driver with independen

Low Noise Amplifier with Bypass Switch/Mixer

Description The CXG1097EN is a dual mode low noise amplifier with a bypass switch/ mixer MMIC for Japan CDMA cellular. This IC is designed using the Sonys GaAs J-FET process. Features • Dual mode low noise amplifier with a bypass switch • High gain Low noise amplifier high current mode: G

Simple RF T4 Receiver - 315MHz Toggle Type

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T1/E1 Isolation Transformer

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