Silicon P Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

Silicon P Channel Power MOSFET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

Silicon P Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

Silicon P Channel Power MOSFET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

Dual P-Channel 30-V (D-S) MOSFET

文件：1.19385 Mbytes Page：9 Pages

Silicon P Channel Power MOS FET High Speed Power Switching

文件：115.79 Kbytes Page：10 Pages

Dual P-Channel 30-V (D-S) MOSFET

文件：1.19379 Mbytes Page：9 Pages

In-System Programmable High Density PLD

Description The ispLSI 1024/883 is a High-Density Programmable Logic Device processed in full compliance to MIL-STD-883. This military grade device contains 144 Registers, 48 Universal I/O pins, six Dedicated Input pins, four Dedicated Clock Input pins and a Global Routing Pool (GRP). Featu

Pulse Transformers

RoHS compliant UL 94V-0 package material Isolation to 4kVrms Compact footprint PCB mounting Backward compatible with Sn/Pb soldering systems

In-System Programmable High Density PLD

Description The ispLSI 1024EA is a High Density Programmable Logic Device containing 144 Registers, 48 Universal I/O pins, two Dedicated Input pins, four Dedicated Clock Input pins and a Global Routing Pool (GRP). Features • HIGH DENSITY PROGRAMMABLE LOGIC — 4000 PLD Gates — 48 I/O

Pulse Transformers

文件：109.19 Kbytes Page：2 Pages

SM BATTERY HOLDER AA, ON TAPE

文件：96.76 Kbytes Page：1 Pages