Silicon P Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting

Silicon P Channel Power MOS FET High Speed Power Switching

Silicon P Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting

Silicon P Channel Power MOSFET High Speed Power Switching

Features • Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting

Silicon P Channel Power MOS FET High Speed Power Switching

Power MOSFETs

Silicon P Channel Power MOS FET High Speed Power Switching

文件：109.55 Kbytes Page：9 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1021AM BICMOS device integrates a prescaler, programmable dividers, and a phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 3 V supplies. FEATURES • Low phase noise

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1021M BICMOS device integrates a prescaler, programmable dividers, and a phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 3 V supplies. FEATURES • Low phase noise •

10-Bit, 12-Bit Binary Multiplying D/A Converter

文件：264.99 Kbytes Page：14 Pages

10-Bit, 12-Bit Binary Multiplying D/A Converter

文件：264.99 Kbytes Page：14 Pages