Silicon P Channel Power MOS FET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

Silicon P Channel Power MOSFET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

Dual P-Channel MOSFET uses advanced trench technology

文件：1.33593 Mbytes Page：5 Pages

Power MOSFETs

Silicon P Channel Power MOSFET High Speed Power Switching

Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting

Silicon P Channel Power MOS FET High Speed Power Switching

文件：115.92 Kbytes Page：10 Pages

FOR OPTICAL INFORMATION SYSTEMS

DESCRIPTION ML1XX6 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 658-nm and standard CW light output of 30mW. ML1XX6 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

Integrated Circuit AF Small-Signal Amplifier for Tape Recorder

Integrated Circuit AF Small–Signal Amplifier for Tape Recorder

Recording/playback and 2 W audio power amplifier

GENERAL DESCRIPTION The TDA1016 is a monolithic integrated audio power amplifier, preamplifier and A.L.C. circuit designed for applications in radio-recorders and recorders. The wide supply voltage range makes this circuit very suitable for d.c. and a.c. apparatus. The circuit incorporates the fo

16A SCRs

DESCRIPTION The TYN / TN16 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities.

.050 NPN Phototransistors

PRODUCT DESCRIPTION A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The hermetic package offers superior protection from hostile environments. The base connection is brought out allowing conventional transistor biasing. These devices