价值优化的霍尔效应传感器系列

HAL 2xy开关系列产品使用CMOS技术生产。传感器包含主动偏置补偿的温度补偿霍尔片，比较器和开漏输出晶体管。比较器通过霍尔片（霍尔电压）来比较实际的磁通量和设定的参考值（开关点）。相应地，输出晶体管进行开关。主动偏置补偿使得磁参数对机械应力效应下保持稳定可靠。此外，磁参数在全电压和全温度下都是持续的。本系列传感器是为了工业和汽车应用设计的，工作电压从3.8伏到24伏，环境温度从−40 °C up to 125 °C。HAL 2xy产品有SOT89B SMD和铅封 TO92UA两种封装。 ·Operates from 3.8 V to 24 V supply voltage\n·Operates with static magnetic fields and dynamic magnetic fields up to 10 kHz\n·Overvoltage protection at all pins\n·Reverse voltage protection at VDD pin\n·Magnetic characteristics are robust against mechanical stress effects\n·Short-circuit protected o;

封装/外壳：TO-226-3，TO-92-3 短体 功能：卡销 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MAGNETIC SWITCH LATCH TO92UA-5 传感器，变送器 磁性传感器 - 开关（固态）

Hall-Effect Sensor Family

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P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.