位置:首页 > IC中文资料第8663页 > HAF2021
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HAF2021 | Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over | RENESAS 瑞萨 | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over | RENESAS 瑞萨 | |||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over | RENESAS 瑞萨 | |||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over | RENESAS 瑞萨 | |||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over | RENESAS 瑞萨 | |||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over | RENESAS 瑞萨 | |||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET Series Power Switching 文件:115.46 Kbytes Page:11 Pages | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET Series Power Switching 文件:115.46 Kbytes Page:11 Pages | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET Series Power Switching | RENESAS 瑞萨 | |||
Silicon N Channel MOS FET Series Power Switching | RENESAS 瑞萨 | |||
N-Channel, 20V, 0.89A, Small Signal MOSFET Features z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-23/323 Applications z DC-DC converter circuit z Small Signal Switch z Load Switch z Level Shift | TUOFENG 拓锋半导体 | |||
FIXED SIP DELAY LINE TR 1ns FUNCTIONAL DESCRIPTION The 2020- and 2021-series devices are fixed, single-input, single-output, passive delay lines. The signal input (IN) is reproduced at the output (OUT), shifted by a time (TD) given by the device dash number. The characteristic impedance of the lines is nominally 50 ohms. Th | DATADELAY | |||
TOKEN RING MAGNETICS 文件:99.66 Kbytes Page:2 Pages | XFMRS | |||
Snap Bushings 文件:133.28 Kbytes Page:1 Pages | Heyco | |||
PCB footprint 文件:244.16 Kbytes Page:3 Pages | AVAGO 安华高 |
HAF2021产品属性
- 类型
描述
- 型号
HAF2021
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel MOSFET Series Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
25+23+ |
TO263 |
72658 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
RENESAS/瑞萨 |
22+ |
TO263 |
8000 |
原装正品支持实单 |
|||
RENESAS瑞萨/HITACHI日立 |
24+ |
TO-252 |
9800 |
新进库存/原装 |
|||
RENESAS |
10+ |
SOT-252 |
1313 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
23+ |
TO-263 |
8400 |
专注配单,只做原装进口现货 |
|||
RENESAS |
23+ |
TO252 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS/瑞萨 |
2023+ |
TO252 |
5288 |
专注全新正品,优势现货供应 |
|||
RENESAS/瑞萨 |
23+ |
TO263 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
RENESAS |
2025+ |
TO263 |
3550 |
全新原厂原装产品、公司现货销售 |
HAF2021芯片相关品牌
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DdatasheetPDF页码索引
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