| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HAF2007 | Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt | HITACHIHitachi Semiconductor 日立日立公司 |   | |
HAF2007 | Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o | RENESAS 瑞萨 | | |
HAF2007 | Silicon N Channel MOS FET Series Power Switching Description\nThis FET has the over temperature shut-down capability sensing to the junction temperature.\nThis FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over po • Logic level operation (4 to 6 V Gate drive)\n• High endurance capability against to the short circuit\n• Built-in the over temperature shut-down circuit\n• Latch type shut-down operation (Need 0 voltage recovery); | RENESAS 瑞萨 | | |
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o | RENESAS 瑞萨 | | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o | RENESAS 瑞萨 | | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o | RENESAS 瑞萨 | | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o | RENESAS 瑞萨 | | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET Series Power Switching 文件：114.66 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
Intelligent Power Devices | RENESAS 瑞萨 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.04375 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Intelligent Power Devices | RENESAS 瑞萨 | | ||
6 6W STEREO AMPLIFIER 6 + 6W STEREO AMPLIFIER DESCRIPTION The TDA2007A is a class AB dual Audio power amplifier assembled in single in line 9 pins package, specially designed for stereo application in music centers TV receivers and portable radios. .HIGH OUTPUT POWER .HIGH CURRENT CAPABILITY .AC S | STMICROELECTRONICS 意法半导体 | | ||
6 6W STEREO AMPLIFIER 6 + 6W STEREO AMPLIFIER DESCRIPTION The TDA2007A is a class AB dual Audio power amplifier assembled in single in line 9 pins package, specially designed for stereo application in music centers TV receivers and portable radios. .HIGH OUTPUT POWER .HIGH CURRENT CAPABILITY .AC S | STMICROELECTRONICS 意法半导体 | | ||
Fast-Charge IC 文件：172.4 Kbytes Page：16 Pages | TI 德州仪器 | | ||
Fast-Charge IC 文件：172.4 Kbytes Page：16 Pages | TI 德州仪器 | | ||
Fast-Charge IC 文件：172.4 Kbytes Page：16 Pages | TI 德州仪器 | |
HAF2007产品属性
- 类型
描述
- 通道数：
Single
- 汽车业：
YES
- VDSS (V)：
60
- ID (A)：
5
- RDS (ON)(mΩ) 最大值@4V至4.5V：
120
- RDS (ON)(Ω) 典型值@4V至4.5V：
73
- RDS (ON)(mΩ) 最大值@8V至10V：
75
- RDS (ON)(Ω) 典型值@8V至10V：
55
- Pch (W)：
20
- Tsd (°C) 典型值：
175
- 封装类型：
DPAK(S)
- 生产状态：
Non-promotion
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
24+ |
TO252 |
2645 |
||||
VBsemi(台湾微碧) |
2447 |
TO252 |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
VBsemi/台湾微碧 |
22+ |
TO-252 |
20000 |
公司只做原装 品质保障 |
|||
RENESAS/瑞萨 |
25+ |
TO-263 |
20300 |
RENESAS/瑞萨原装特价HAF2007S即刻询购立享优惠#长期有货 |
|||
RENESAS |
23+ |
TO-252 |
71100 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
VBsemi |
21+ |
TO252 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS/瑞萨 |
2022+ |
TO-252 |
9400 |
原厂代理 终端免费提供样品 |
|||
HITACHI |
26+ |
TO252 |
6980 |
原装现货,可开13%税票 |
|||
RENESAS |
2023+ |
SOT-252 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
HAF2007芯片相关品牌
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HAF2007数据表相关新闻
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DdatasheetPDF页码索引
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