位置：首页 > IC中文资料第6258页 > HAF2007
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HAF2007 | Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt | HitachiHitachi Semiconductor 日立日立公司 |   | |
HAF2007 | Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o | RENESAS 瑞萨 | | |
HAF2007 | Silicon N Channel MOS FET Series Power Switching | RENESAS 瑞萨 | | |
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o | RENESAS 瑞萨 | | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o | RENESAS 瑞萨 | | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o | RENESAS 瑞萨 | | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o | RENESAS 瑞萨 | | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET Series Power Switching 文件：114.66 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.04375 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Intelligent Power Devices | RENESAS 瑞萨 | | ||
Intelligent Power Devices | RENESAS 瑞萨 | | ||
10 BASE T ISOLATION MAGNETICS 文件：74.83 Kbytes Page：2 Pages | XFMRS | | ||
IEC Interconnection Cord with IEC Connector C13, V-Lock, straight 文件：380.7 Kbytes Page：2 Pages | SCHURTER 硕特 | | ||
Low Phase Noise VCXO with multipliers (for 100-200MHz Fund Xtal) 文件：93.36 Kbytes Page：8 Pages | ABRACON | | ||
Low Phase Noise VCXO with multipliers (for 100-200MHz Fund Xtal) 文件：93.36 Kbytes Page：8 Pages | ABRACON | | ||
Low Phase Noise VCXO with multipliers (for 100-200MHz Fund Xtal) 文件：93.36 Kbytes Page：8 Pages | ABRACON | |
HAF2007产品属性
- 类型
描述
- 型号
HAF2007
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
Silicon N Channel MOS FET Series Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
TO-252 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
RENESAS/瑞萨 |
24+ |
TO-252 |
50 |
只做原厂渠道 可追溯货源 |
|||
VBSEMI/微碧半导体 |
24+ |
TO252 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
RENESAS |
24+ |
TO252 |
2645 |
||||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
R |
23+ |
TO-252 |
6000 |
原装正品，支持实单 |
|||
VBsemi(台湾微碧) |
2447 |
TO252 |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
RENESAS/瑞萨 |
23+ |
TO-252 |
8400 |
专注配单,只做原装进口现货 |
|||
RENESAS |
24+ |
TO-252 |
16900 |
原装正品现货支持实单 |
|||
RENESAS/瑞萨 |
25+ |
TO-263 |
20300 |
RENESAS/瑞萨原装特价HAF2007S即刻询购立享优惠#长期有货 |
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DdatasheetPDF页码索引
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