位置:HAF2007-90STR > HAF2007-90STR详情

HAF2007-90STR中文资料

厂家型号

HAF2007-90STR

文件大小

95.12Kbytes

页面数量

9

功能描述

Silicon N Channel MOSFET Series Power Switching

数据手册

下载地址一下载地址二到原厂下载

生产厂商

RENESAS

HAF2007-90STR数据手册规格书PDF详情

Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

Features

• Logic level operation (4 to 6 V Gate drive)

• High endurance capability against to the short circuit

• Built-in the over temperature shut-down circuit

• Latch type shut-down operation (Need 0 voltage recovery)

HAF2007-90STR产品属性

  • 类型

    描述

  • 型号

    HAF2007-90STR

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    Silicon N Channel MOSFET Series Power Switching

更新时间:2025-10-4 16:30:00
供应商 型号 品牌 批号 封装 库存 备注 价格
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TO252
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RENESAS
23+
TO263
8650
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RENESAS
原厂封装
9800
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RENESAS
2025+
TO263
3550
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RENESAS/瑞萨
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TO263
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RENESAS/瑞萨
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TO-263
23000
只做正品原装现货
RENESAS/瑞萨
23+
TO-251
8400
专注配单,只做原装进口现货