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HAF1001

Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability

Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over

HITACHIHitachi Semiconductor

日立日立公司

HAF1001

Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o

RENESAS

瑞萨

HAF1001

Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut–down Capability

This FET has the over temperature shut–down capability sensing to the junction temperature.\nThis FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpti;

HITACHIHitachi Semiconductor

日立日立公司

HAF1001

Intelligent Power Devices

RENESAS

瑞萨

Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o

RENESAS

瑞萨

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

PANJIT

強茂

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE: 50 to 400 Volts CURRENT: 10.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, hig

PANJIT

強茂

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

MOTOROLA

摩托罗拉

10-Bit P Compatible A/D Converter

文件:201.08 Kbytes Page:9 Pages

NSC

国半

10-Bit P Compatible A/D Converter

文件:201.08 Kbytes Page:9 Pages

NSC

国半

HAF1001产品属性

  • 类型

    描述

  • 通道数:

    Single

  • VDSS (V):

    -60

  • ID (A):

    -15

  • RDS (ON)(mΩ) 最大值@4V至4.5V:

    130

  • RDS (ON)(Ω) 典型值@4V至4.5V:

    100

  • RDS (ON)(mΩ) 最大值@8V至10V:

    90

  • RDS (ON)(Ω) 典型值@8V至10V:

    70

  • Pch (W):

    50

  • Tsd (°C) 典型值:

    175

  • 封装类型:

    TO220AB

  • 生产状态:

    Product Inquiry

更新时间:2026-5-15 19:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HAF
22+
TO-262
20000
公司只做原装 品质保障
RENESAS
TO263
9500
一级代理 原装正品假一罚十价格优势长期供货
VBsemi
21+
TO220
10065
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS
25+23+
TO263
34984
绝对原装正品全新进口深圳现货
HITACHI/日立
25+
SOT263
9800
全新原装现货,假一赔十
HIT
23+
TO263
7000
绝对全新原装!100%保质量特价!请放心订购!
HIT
24+
TO263
90
VBsemi
25+
TO220
9000
只做原装正品 有挂有货 假一赔十
VBSEMI
24+
TO220
48240
全新 发货1-2天
R
23+
TO-220A
8560
受权代理!全新原装现货特价热卖!

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