10kHz to 10MHz, Low Power Crystal Oscillator

The HA7210 is a very low power crystal-controlled oscillators that can be externally programmed to operate between 10kHz and 10MHz. For normal operation it requires only the addition of a crystal. The part exhibits very high stability over a wide operating voltage and temperature range. Featu

10kHz to 10MHz, Low Power Crystal Oscillator

The HA7210 is a very low power crystal-controlled oscillators that can be externally programmed to operate between 10kHz and 10MHz. For normal operation it requires only the addition of a crystal. The part exhibits very high stability over a wide operating voltage and temperature range. Featu

10kHz to 10MHz, Low Power Crystal Oscillator

The HA7210 is a very low power crystal-controlled oscillators that can be externally programmed to operate between 10kHz and 10MHz. For normal operation it requires only the addition of a crystal. The part exhibits very high stability over a wide operating voltage and temperature range. Featu

10kHz to 10MHz, Low Power Crystal Oscillator

The HA7210 is a very low power crystal-controlled oscillators that can be externally programmed to operate between 10kHz and 10MHz. For normal operation it requires only the addition of a crystal. The part exhibits very high stability over a wide operating voltage and temperature range. Featu

10kHz to 10MHz, Low Power Crystal Oscillator

文件：314.33 Kbytes Page：15 Pages

10kHz to 10MHz, Low Power Crystal Oscillator

10kHz to 10MHz, Low Power Crystal Oscillator

文件：314.33 Kbytes Page：15 Pages

10kHz to 10MHz, Low Power Crystal Oscillator

文件：314.33 Kbytes Page：15 Pages

10kHz to 10MHz, Low Power Crystal Oscillator

文件：314.33 Kbytes Page：15 Pages

10kHz to 10MHz, Low Power Crystal Oscillator

文件：314.33 Kbytes Page：15 Pages

10kHz to 10MHz, Low Power Crystal Oscillator

文件：314.33 Kbytes Page：15 Pages

LED 驱动IC

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier

文件：459.36 Kbytes Page：15 Pages