Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

丝印代码：L8；40 V, 200 mA Schottky barrier dual diode

1. General description Planar Schottky barrier dual diode with an integrated guard ring for stress protection, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance • AEC-Q101 qualified 2.1

丝印代码：L8；Schottky barrier diodes in small packages

Features * Low forward voltage * Small SMD plastic packages * Low capacitance

肖特基二极管

0.2A,40V,Surface Mount Small Signal Schottky Diodes

Small Signal Schottky

Planar Schottky barrier diodes with an integrated guard ring for stress protection. Encapsulated in small Surface-Mounted Device (SMD) plastic packages.

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SCHOTTKY BARRIER DIODES

DESCRIPTION The UTC BAT721X are schottky barrier diodes, it uses UTC’s advanced technology to provide customers with low forward voltage drop and ultra high switching speed, etc. The UTC BAT721X is suitable for applications such as ultra high-speed switching, protection circuits and voltage clam

丝印代码：L8；40 V, 200 mA Schottky barrier dual diode

1. General description Planar Schottky barrier dual diode with an integrated guard ring for stress protection, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low capacitance • Qualified according to AE

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 40V SOT23 分立半导体产品 二极管 - 整流器 - 阵列

SCHOTTKY BARRIER (DOUBLE) DIODES

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丝印代码：TAC；SCHOTTKY BARRIER (DOUBLE) DIODES

文件：173.47 Kbytes Page：5 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：SCHOTTKY BARRIER (DOUBLE) DIODES 分立半导体产品 二极管 - 整流器 - 阵列

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier

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