Internally amplified helicopter accelerometer

Key features • Manufactured in ISO 9001 facility

芯片电容器

产品代码\t\t尺寸\t温度系数\t容量\t精度\t额定工作电压\t镀层体系\t包装方式\nHA：不留边电容\t1515\tC0G\t1R5\tJ\t016:16V\tW：TiW/Au\tL：蓝膜\nHB：单面留边电容\t2020\tX7R\t101\tK\t025：25V\tN：TiW/Ni/Au\tT：盒装\n\t\t\t3030\tX7S\t102\tM\t050:50V\tT：TaN/TiW/Au\t\n\t\t\t\tY5V\t\t\t100:100V\tF：TaN/TiW/Ni/Au\t • 最高使用频率 Max Working frequency:100GHz\n• 最小尺寸 Min Size:0.200mm×0.200mm\n• 容量范围 Capacitance range: 0.2pF-10000pF\n• 工作温度范围 Working temperature range:-55℃-+125℃;

芯片电容器

产品代码\t\t尺寸\t温度系数\t容量\t精度\t额定工作电压\t镀层体系\t包装方式\nHA：不留边电容\t1515\tC0G\t1R5\tJ\t016:16V\tW：TiW/Au\tL：蓝膜\nHB：单面留边电容\t2020\tX7R\t101\tK\t025：25V\tN：TiW/Ni/Au\tT：盒装\n\t\t\t3030\tX7S\t102\tM\t050:50V\tT：TaN/TiW/Au\t\n\t\t\t\tY5V\t\t\t100:100V\tF：TaN/TiW/Ni/Au\t • 最高使用频率 Max Working frequency:100GHz\n• 最小尺寸 Min Size:0.200mm×0.200mm\n• 容量范围 Capacitance range: 0.2pF-10000pF\n• 工作温度范围 Working temperature range:-55℃-+125℃;

PNP SILICON TRANSISTOR

APPLICATIONS High Voltage switching， AF Power Amp.

通用晶体管

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

Operational Amplifiers

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Operational Amplifiers

文件：509.25 Kbytes Page：17 Pages