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H836RFCA

封装/外壳:轴向 包装:散装 描述:RES 36 OHM 1% 1/4W AXIAL 电阻器 通孔式电阻器

ETC

知名厂家

P-Channel 2.5V Specified MOSFET

General Description SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performa

FAIRCHILD

仙童半导体

Linear Integrated Circuit TV Horizontal Processor

Description: The NTE836 is a TV Horizontal Processor in an 8–Lead DIP type package that includes a phase detector, oscillator and pre–driver. This device is designed for use in all types of television receivers that have negative flyback inputs. Features: • Internal Shunt Regulator •

NTE

MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE HIGH

DESCRIPTION The TS836 ultra low power integrated circuit incorporates a high stability band-gap voltage reference and a comparator with open drain output. The threshold voltage is set at 4.5V for TS836-4 by internal thermally matched resistances. The comparator exhibits a 20µs response (with 10

STMICROELECTRONICS

意法半导体

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The µPA836TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.7 dB TYP. @f = 2 GHz, VCE = 1 V, IC = 3 mA • High gain Q1 : |

NEC

瑞萨

MicroConverter, Dual 16-Bit/24- Bit ADCs with Embedded 62 kB Flash MCU

文件:1.43798 Mbytes Page:80 Pages

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更新时间:2026-3-18 16:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HITACHI
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SMD
100500
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HITTITE
QFN
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24+
N/A
76000
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TE
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con
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