| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel 60-V (D-S) MOSFET FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: | VBSEMI 微碧半导体 |   | ||
N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM75N06 uses advanced trench technology and design to provide excellent RDS(ON) with | ADV 爱德微 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
Fast Switching Speed 文件：65.68 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 60-V (D-S) MOSFET 文件：1.27408 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RUHIPS |
24+ |
NA/ |
447 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
原装 |
25+ |
TO-220 |
20300 |
原装特价75N06G即刻询购立享优惠#长期有货 |
|||
IDT |
21+ |
BGA |
20000 |
原装现货 只做自己公司真实库存 |
|||
IDT |
25+ |
BGA |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
IDT |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
O |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
|||
VB |
2024 |
TO-220 |
13500 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
IDT |
23+ |
BGA |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
IDT |
24+ |
39 |
|||||
ON/进口原 |
17+ |
TO-220 |
6200 |
H75N06FI规格书下载地址
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