Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) (Battery Switch, ESD Protected)

Features • RDS(on)=32mΩ@VGS=2.5V, ID=5.5A • RDS(on)=24mΩ@VGS=4.5V, ID=6.5A • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Li ion Battery Packs Use • Designed for Battery Switch Appliactions • ESD Protected

Low Voltage MOSFET

Fast Ethernet Cat5e Data Single-Ended Cordset

Product Description Fast Ethernet Cat5e Data Single-Ended Cordset: RJ45 Field Attachable, male, straight, 4-pin, RJ45-coded, shielded, black housing, 30 V AC / 42 V DC, 1.5 A; TPE green cable, 4-wires, 0.38 mm²

Dual N-Channel Logical Level MOSFET

文件：142.73 Kbytes Page：5 Pages

Dual N-Channel 20-V (D-S) MOSFET

文件：254.89 Kbytes Page：5 Pages

Dual N-Channel 20-V (D-S) MOSFET

文件：319.83 Kbytes Page：5 Pages

Standard Single-phase Full wave

文件：538.78 Kbytes Page：16 Pages