丝印代码：H678；13 Gbps, 2:1 SELECTOR w/ PROGRAMMABLE OUTPUT VOLTAGE

Features Supports High Data Rates: up to 13 Gbps Single-ended inputs Differential & Single-ended outputs Fast Rise and Fall Times: 19 / 18 ps Low Power Consumption: 250 mW typ. Programmable Differential Output Voltage Swing: 600 - 1200 mV Propagation Delay: 125 ps Single Supply: -3.3V 16

丝印代码：H6789B；GaAs MMIC I/Q DOWNCONVERTER 37 - 44 GHz

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Photosensor Modules

Metal Package PMT The H5773/H5783/H6779/H6780 series are photosensor modules housing a metal package PMT and high-voltage power supply circuit. The metal package PMTs have a metallic package with the same diameter as a TO-8 package used for semiconductor photodetectors, and deliver high gain, wid

Photosensor Modules

Metal Package PMT The H5773/H5783/H6779/H6780 series are photosensor modules housing a metal package PMT and high-voltage power supply circuit. The metal package PMTs have a metallic package with the same diameter as a TO-8 package used for semiconductor photodetectors, and deliver high gain, wid

Photosensor Modules

Metal Package PMT The H5773/H5783/H6779/H6780 series are photosensor modules housing a metal package PMT and high-voltage power supply circuit. The metal package PMTs have a metallic package with the same diameter as a TO-8 package used for semiconductor photodetectors, and deliver high gain, wid

Photosensor Modules

Metal Package PMT The H5773/H5783/H6779/H6780 series are photosensor modules housing a metal package PMT and high-voltage power supply circuit. The metal package PMTs have a metallic package with the same diameter as a TO-8 package used for semiconductor photodetectors, and deliver high gain, wid

Photosensor Modules

Metal Package PMT The H5773/H5783/H6779/H6780 series are photosensor modules housing a metal package PMT and high-voltage power supply circuit. The metal package PMTs have a metallic package with the same diameter as a TO-8 package used for semiconductor photodetectors, and deliver high gain, wid

Photosensor Modules

Metal Package PMT The H5773/H5783/H6779/H6780 series are photosensor modules housing a metal package PMT and high-voltage power supply circuit. The metal package PMTs have a metallic package with the same diameter as a TO-8 package used for semiconductor photodetectors, and deliver high gain, wid

FAST RECOVERY DIODE

FAST RECOVERY DIODE Repetitive voltage up to 4500 V Mean forward current 1690 A Surge current 27 kA

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line